Lecture12Accouplingtransistorbiasing

1. Design a fixed-base BJT bias circuit, similar to the one shown in Figure 1, such that VCE = 5.5 V. Assume VBE (on) = 0.7 V and 3=150 for the transistor. 5V HUF RB ww Figure 1 1.5k Q2N2222 12V Note: Use PN2222A in Multisim

a) The n-channel JFET and the D-MOSFET have very similar I-V output characteristics. Which of these two structures can be operated in enhancement mode and why is that possible?

Example 1) Determine the Q-point, and find the maximum peak value of base current for linear operation. Assume Boc = 200. I BQ. Ico, Iea vee, VBEO, VCB Q Rc 3302 RB Vcc VCE 20V 47KQ VBB 10V

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This graphical solution represents IDss Q-point VGS VP VGG Select one: A. self bias for an n-channel JFET B. fixed-bias configuration for an n-channel JFET. C. voltage-divider bias for an n-channel JFET D. None of the above

Draw and explain the schematic diagram for the following: Common Base NPN operating in cut-off region Common Emitter PNP operating in the active region Common Collector NPN operating saturation region From the given figure, identify and explain the 1.Type of Transistor 2. Type of Configuration 3. Mode of Operation V3 SV Q2 100A/A Q3 100A/A 7 V4 5V V6 5V

........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration

A 4.7 zener diode is connected to the base resistor. The left side of the resistor sits at about 12V. The right side of the biasing resistor is connected to the Zener and npn transistor. The Zener bias is 5mA. The base current needed is 80uA. What is the appropriate resistor for this circuit? (In kohms) I

The reverse saturation current of an NPN transistor in common-base circuit is 12.5 µA. For an emitter current of 2 mA, collector current is 1.97 mA. Determine the current gain and base current. Î Add file

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Determine the Q-point, and find the maximum peak value of base current for linear operation. Assume BDC = 200. Ic, IB, Ie, Vce, VcB. Rc 3300 RB Vcc 47KQ 20V VBB 10V

Small sgnal anysis jfet

2. For the fixed bias configuration shown in figure determine IB Ic.VCE,Vc,VB,VE 16V 1.8k 510k

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Given shows the mutual characteristic for a junction gate field effect transistor. When the gate - source voltage is -2.5V, determine the value of drain current, the dynamic value of forward transconductance. -2.5V 2.5V 12mA 5mA 20 18 16 14 12 10 4 2 0 -5.0-4.5-4.0-3.5-3.0-2.5 -2.0-1.5 -1.0-0.5 0 Gate-source voltage, Vos (V) 6 (MA) Drain current