HW1 SOL ECE3220 Electronics II S23 (1)

Suppose that we have an unusual type of FET for which iD=3vGS3+0.1vDS Here, iD is in mA, vGS is in volts, and vDS is in volts. Determine the values of gm and rd for a Q point of VGSQ=1 V and VDSQ = 10 V.

(b) Draw the ID - VD curves for this MOSFET for ±VD for V₁ = 0 and V₁ = 1 V. VȚ = 1V. n V₁ + p-type D ID V₁

Needs Complete solution with 100 % accuracy don't use chat gpt or ai plz plz plz.

Given the information below.    Your task is to write a program that samples an analog signal a0 as illustrated below using the MSP430’sADC12 device. Answer the following questions. A. What is the maximum and minimum input voltage of the input signal a0?B. What is the duration of one period of the input signal a0 in milliseconds?C. Let us assume that we configure the MSP430’s device to sample analog input a0 with the sampling frequency        fsample = 2 KHz. How many samples, M, do we have per one period of the input analog signal? Fill in the                following table by determining the first 6 samples and the last (Mth) sample. Assume that our sampling is                  synchronized with the a0 (i.e., the first sample is taken at the very beginning of an a0 period). Assume reference      voltages VR+ = 2.5 V and VR- = 0V.      Sample Number t [ms] a0 [V] Sample value [decimal] 1       2       3       4       5       6       M =        E. If you know that…

This question would help revise concepts related to MOS device and basic circuit design. Please mark all correct answers to the following multiple choice questions. 1.1. Which of the following are true about MOSFET devices? (a) MOS stands for "Metallurgy Of Semiconductors" (b) MOSFET current conduction is due to drift phenomenon (c) An externally induced voltage at the gate is fundamental to inversion layer (d) Naming of "Source" and "Drain" regions are only dependent on aspect ratio 1.2. Which of the following are true about NMOS transistors (a) The threshold voltage can be positive or negative depending on geometry (b) Channel length modulation parameter (A) is always positive (c) Current flows from drain to source (d) Threshold voltage is a fixed value based on process, it cannot be changed by external voltages 1.3. In a MOS device (a) Cas and CGp both have both geometry and voltage dependencies (b) Cas is takes minimum value at saturation while CGD goes to maximum value (c) CoB and…