ENGR65_Lab8

This question would help revise concepts related to MOS device and basic circuit design. Please mark all correct answers to the following multiple choice questions. 1.1. Which of the following are true about MOSFET devices? (a) MOS stands for "Metallurgy Of Semiconductors" (b) MOSFET current conduction is due to drift phenomenon (c) An externally induced voltage at the gate is fundamental to inversion layer (d) Naming of "Source" and "Drain" regions are only dependent on aspect ratio 1.2. Which of the following are true about NMOS transistors (a) The threshold voltage can be positive or negative depending on geometry (b) Channel length modulation parameter (A) is always positive (c) Current flows from drain to source (d) Threshold voltage is a fixed value based on process, it cannot be changed by external voltages 1.3. In a MOS device (a) Cas and CGp both have both geometry and voltage dependencies (b) Cas is takes minimum value at saturation while CGD goes to maximum value (c) CoB and…

5- a-) Define the MOSFET in the figure, explain by drawing its input and output circuit characteristics.b-) Since k=0.1 mA/V2, VGS=5V and VT=2.5V for this MOSFET, find the VDS voltage using the circuit.

This problem is AC analysis problem. DC analysis is not needed to answer the question. A) Convert this bias circuit into a bypassed common emitter amplifier that has an output across a load resistor (RL). To do this you should draw three capacitors on the figure below, an input voltage source, and any resistors you think that should be added. B) In the space below the figure, Draw the hybrid t model for this amplifier circuit including all voltages and resistors. Label Vi, Vbe, and vo on the model. Assume the capacitors you add act as short circuits at AC. Be sure to include resistors R1, R2, R3, R4, and RL in the hybrid pi model. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vo for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. 12V Assume the following: o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O…

Open with v Consider class-A emitter follower circuit shown in the figure below. The circuit parameters are V+ = 24 V, V- = -24 V, and RL = 2000. The transistor parameters are B = 50, VBElon) = 0.7 V, and VCElsat) = 0.2 V. The output voltage is to vary between +20 V and -20 V. The minimum current in Q1 is to be ie1 = 20 mA. For vo = 0, find the power dissipated in the first transistor Q1- V+

Please describe what parasitics are in amplifier matching and how they might adversely affect a circuit design

(a) What is the output current IO in the circuitshown if −VEE = −10 V andR = 20 ohm? Assume that the MOSFET is saturated.(b) What is the minimum voltage VDDneeded to saturate the MOSFET if VTN = 2.5 Vand K'n = 0.25 A/V2. (c) What must be the powerdissipation ratings of resistor R and the FET.

Please all subpart is compulsory for like this please Asap

QUESTION 2a) How would you characterise power bipolar devices in comparison with power MOSFETs? Illustrate your answer by providing unique features of power MOSFETs. b) Using the aid of a MOSFET diagram, explain operational features of the power MOSFET. Support your explanation using MOSFET operation as a switch. Also, illustrate the conditions needed to drive a power MOSFET in the different regions of operation. c) Discuss four (4) advantages of a bridge or half-bridge forward converter when compared with a single-ended forward converter

........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration