The relation between strain hardening and grain size, and strain hardening and dislocation density needs to be explained. Concept introduction: Strain hardening is the plastic deformation occurring due to stretching of the material. The number of dislocations in a unit volume of materials measured in dislocation density.

Question

a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 K

Answer 1

Question

Chapter 8, Problem 8.17P

Interpretation Introduction

Interpretation:

The relation between strain hardening and grain size, and strain hardening and dislocation density needs to be explained.

Concept introduction:

Strain hardening is the plastic deformation occurring due to stretching of the material. The number of dislocations in a unit volume of materials measured in dislocation density.

Expert Solution & Answer

Trending nowThis is a popular solution!

See solution

Check out sample textbook solution

Students have asked these similar questions

a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 K

The A/D converter wit the specifications listed below is planned to be used in an environment in which the A/D converter temperature may change by ± 10 °C. Estimate the contributions of conversion and quantization errors to the uncertainty in the digital representation of an analog voltage by the converter. FSO N Linearity error Temperature drift error Analog to Digital (A/D) Converter 0-10 V 12 bits ± 3 bits 1 bit/5 °C

6-13. A smooth tube in the form of a circle of radius r rotates in its vertical plane with a constant angular velocity w. The position of a particle of mass m that slides inside the tube is given by the relative coordinate p. Find the differential equation for . e О E g ω Figure P6-13