EBK POWER SYSTEM ANALYSIS AND DESIGN
6th Edition
ISBN: 9781305886957
Author: Glover
Publisher: CENGAGE LEARNING - CONSIGNMENT
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- Figure 2 3) *** The circuit of Figure 3 is designed with W/L = 20/0.18, λ= 0, and ID = 0.25 mA. (Optional- 20 points) a) Compute the required gate bias voltage. b) With such a gate voltage, how much can W/L be increased while M1 remains in saturation? What is the maximum voltage gain that can be achieved as W/L increases? VDD = 1.8 V RD 2k - Vout Vin M₁ Figure 3arrow_forward1) Rs = 4kQ, R₁ = 850 kQ, R₂ = 350 kQ, and R₁ = 4 kQ. The transistor parameters are VTP = -12 V, K'p = 40 µA / V², W/L = 80, and λ = 0.05 V-1. (50 Points) a) Determine IDQ and VSDQ. b) Find the small signal voltage gain. (Av) c) Determine the small signal circuit transconductance gain. (Ag = io/vi) d) Find the small signal output resistance. VDD = 10 V 2'; www www Figure 1 Ссarrow_forwardQ11arrow_forward
- 2) The transistor parameters of the NMOS device in the common-gate amplifier in Figure 2 are VTN = 0.4V, K'n = 100 μA / V², and λ=0. (50 points) a) Find RD such that VDSQ = VDs (sat) + 0.25V. b) Determine the transistor W/L ratio such that the small-signal voltage gain is Av=6. c) What is the value of VGSQ? Сс 2 mA Rp T V=-1.8 V V+= 1.8 V Figure 2arrow_forwardCalculate the percent voltage regulation for a three-phase wye-connected 2500 kVA 6600-V turboalternator operating at full-load Unity power factor The per phase synchronous reactance and the armature resistance are 10.4 2 and 0.071 ≤2, respectively?arrow_forwardDon't use ai to answer I will report you answerarrow_forward
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