POWER SYSTEM ANALYSIS+DESIGN-EBK >I<
6th Edition
ISBN: 9781337259170
Author: Glover
Publisher: INTER CENG
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1) The parameters for circuit in Figure 1 are ẞ₁ = 120, B2=80, VBE1 (On) = VBE2 (on) =
0.7 V and VA1 = VA2 = ∞0.
a) Find the collector current in each transistor.
b) Find the small signal voltage gain Av = Vo/Vs.
c) Find the I/O resistance.
Rib
5V.
Figure 1
Q₁
0.5 k
Vcc=9V
Q2
R
ww
50 Ω
3) In the circuit in Figure 3, the Transistor parameters are VTN = 0.8 V and Kn
= 0.5 mA/V2. Calculate ID, VGS, and VDS.
VDD = 10 V
Κ = 32 ΚΩ
Κρ=4ΚΩ
R2 = 18 ΚΩ
Rs = 2k
Figure 3
2) Consider the circuit in Figure 2, The transistor parameters are VTP = -0.8 V and Kp
= 0.5 mA/V2. Determine ID, VSG and VSD.
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- = = For the circuit shown, let V, 15 V, I, 4A, R₁ =5, R₂ 10, R3 10, and R4 5. Determine the output voltage Vo as follows All resistor values are in ohms. 1. Identify the supermesh and write its corresponding Mesh equation. Provide your expression in terms of the shown mesh current i₁, and 12 of the form (R11 · 11+ R12 · 12 = V₁), then enter the corresponding values: R11 Ω R12 V₁= V Ω 2. Use the above equation, and supermesh inner expression to calculate i₂: i₂- Find Vo V₁ = A V R₁ www M R3 ww V R4 V₁ 0 IS R₁ The relative tolerance for this problem is 7 %. 0arrow_forward11.18 In the circuit of Fig. P11.18, what should the value of thecoupling coefficient k be so that Vout/Vin = 0.49?arrow_forward11.26 Determine the complex power supplied by the source inthe circuit of Fig. P11.26.arrow_forward
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