(a)
Show that the total number of energy states is
(a)
Answer to Problem 66P
It is showed that the total number of energy states is
Explanation of Solution
Given:
The density of the electron states in a metal is
Formula used:
The number of energy states is given by,
Calculation:
The number of energy states in a metal is calculated as:
Conclusion:
Therefore, it is showed that the total number of energy states is
(b)
The fraction of the
(b)
Answer to Problem 66P
The fraction of the conduction electrons that are within
Explanation of Solution
Formula used:
The number of energy states is given by,
Calculation:
The fraction of number of states that is within
Conclusion:
Therefore, the fraction of the conduction electrons that are within
(c)
The fraction of the conduction electrons of copper that are within
(c)
Answer to Problem 66P
The fraction of the conduction electrons of copper that are within
Explanation of Solution
Formula used:
The expression forthe fraction of the conduction electrons that are within
Calculation:
The value of Fermi energy of copper is
Conclusion:
Therefore, the fraction of the conduction electrons of copper that are within
Want to see more full solutions like this?
Chapter 38 Solutions
Physics for Scientists and Engineers
- Consider the density of states N(E) of a conductor. (a) Obtain an analytical expression for the density of states at Fermi energy N(E_F) as a function of m and n, where m is the electron mass and n is the number of conduction electrons per unit volume. This expression should be in units of m^{ -2}eV^{-1} (meter^{-2}. electron-Volt^{-1}). (b) Calculate the numerical value of N(E_F) for Copper. To estimate the value of n, consider the following data for Copper: molar mass 64.54 g/mol and density 8.96 g/cm^{3}. (c) Compare the result of part (b) with the result obtained from the N(E) x E curve and the analytical expression for N(E). Do the values agree?arrow_forwardSilver has a Fermi energy of 5.48 eV. Calculate the electron contribution to the molar heat capacity at constant volume of silver, CV, at 300 K. Express your result (a) as a multiple of R and (b) as a fraction of the actual value for silver, CV = 25.3 J / mol#K. (c) Is the value of CV due principally to the electrons? If not, to what is it due?arrow_forwardA silicon p-n junction (ni = 1010 cm3, Na = 1017 cm-3 and Nd = 4 x 1016 cm 3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C.arrow_forward
- (a) What is the minimum donor doping required to convert silicon into a conductor based on the definitions in Table ? (b) What is the minimum acceptor doping required to convert silicon into a conductor?arrow_forwardSilicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.arrow_forward(a) Show that the ideal gas law can be written as( PV =2NE-/ 3) where N is the number of particles in the sampleand E- is the mean energy. (b) Use the result of (a) to estimate the pressure of the conduction electrons in copper, assuming an ideal Fermi electron gas. Comment on the numerical result, noting that 1 atm = 1.01 x 105 Pa.arrow_forward
- Silicon is doped with 3×1017 arsenic atoms/cm3. (a) Is this n-or p-type silicon?(b)What are the hole and electron concentrations at room temperature? (c) What are the hole and electron concentrations at 250 K?arrow_forward6.9 Show that the fraction of electrons within kBT of the Fermi level is equal to 3kB T/2&F, if D(ɛ) ~ €¹/2arrow_forwardConsider a density of states N(E) of a conductor. (a) Obtain an analytical expression for the density of states at Fermi energy N(E_F) as a function of m and n, where m is the electron mass and n is the number of conduction electrons per unit volume. This expression should be in units of m^{ -2}eV^{-1} (mass^{-2}. electron-Volt^{-1}). (b) Calculation or numerical value of N(E_F) for Copper. To estimate the value of n, consider the following data for copper: molar mass 64.54 g/mol and density 8.96 g/cm^{3}. (c) Compare the result of item (b) with the result obtained from the N(E) x E curve and analytical expression for N(E). Do the values agree?arrow_forward
- The effective density of states of a piece of silicon is Nc = 2x1319 cm³ in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in the silicon? (d) What is the value of the Fermi-Dirac function f(E) at the conduction band edge?arrow_forwardMetallic lithium has a bcc crystal structure. Each unit cell is a cube of side length a = 0.35 nm. (a) For a bcc lattice, what is the number of atoms per unit volume? Give your answer in terms of a. (Hint: How many atoms are there per unit cell?) (b) Use the result of part (a) to calculate the zero-temperature Fermi energy EF0 for metallic lithium. Assume there is one free electron per atom.arrow_forwardThe maximum velocity of carriers in silicon is approximately 107 cm/s. (a) What is the maximum drift current density that can be supported in a region of p-type silicon with a doping of 5 × 1017/cm3? (b) Repeat for a region of n-type silicon with a doping of 4×1015/cm3?arrow_forward
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning