The mean free paths for the
Answer to Problem 36P
The mean free paths for the conduction electrons for Na, Au and Sn are
Explanation of Solution
Given:
The temperature is
The resistivity and Fermi speed of Na is
The resistivity and Fermi speed of Au is
The resistivity and Fermi speed of Sn is
Formula used:
The expression of mean free path is given by,
Here,
Calculation:
Refer to the Table 38-1, the value of
The mean free paths for the conduction electrons for Na is calculated as,
The mean free paths for the conduction electrons for Au is calculated as,
The mean free paths for the conduction electrons for Sn is calculated as,
Conclusion:
Therefore, the mean free paths for the conduction electrons for Na, Au and Sn are
Want to see more full solutions like this?
Chapter 38 Solutions
Physics for Scientists and Engineers
- Since the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.arrow_forwardGiven the fermi energy and electron concentration 7.00 eV and 8.0x1026 e /m' respectively of a Copper of resistivity 1.7x10 N.m, calculate the mean free path. 8- (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nmarrow_forwardAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forward
- In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forwardThe minority carriers in N-type Si, having a conductivity of (0.01(2.m)-1}, and mobility of electron=D0.36 (m2/(v.sec)).(ni=1.45*10^10 /m3) is O 1.74 x 1017/m3 O 17.36*10^16 /m3 O 1211.117512 /m3 O 18.45*10^4 /m3 O Other:arrow_forwardPure silicon wafer at the room temperature has an electrical conductivity of 5.5x1040'm3. The electron and hole mobilities of charge carriers are 0.35 m2 / V's1 and 0.12 m2 / V's' respectively. Compute electron and hole concentrations at room temperature.arrow_forward
- A Pentium IV microchip has dimensions of 217 mm x 217 mm. Suppose each transistor on the chip is made up of a 10 x10 square of atoms (that is 100 atoms per transistor). How many transistors could fit on the Pentium IV chip if the spacing between the silicon atoms is 0.54 nm?arrow_forwardAn abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =arrow_forwardIn a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cmarrow_forward
- A 37.5 ko resistor is made of two strips connected in parallel, each one has 6 mm long, one strip is of intrinsic germanium and has 0.5 mm wide and 40 um thickness. Determine the width of the other strip in mm if its thickness is 10 µm and is made of Ge doped with 15.625x10" donor atom/m', at the working temperature. The intrinsic carrier density of Ge is 3.125×10" m, and the electron and hole mobilities are 0.4 m/v.sec. and 0.2 m/v.sec., respectivelyarrow_forwardThe conductivity of an intrinsic silicon sample is found to be 1.02 m.S.m-1 at 297.2 K and 2.15 mS.m-1 at 307.9 K. What is the bandgap energy in silicon? (Boltzmann constant: 1.38064852 * 10-23 m². kg. s-². K−¹) Answer:arrow_forwardWe have a piece of Si (shown below) with dimensions 50 um x 200 um x 0.25 um. The Silicon is doped uniformly with ND = 1014 cm3. What is the resistance of the slab when measured along the length (200 um)? %3| If a light with photonic energy greater than the bandgap of Si were to be shone from the top surface such that it produces uniform hole-electron pairs Ap =An = 5E12 cm-3 throughout the slab, what would be the ratio of the illuminated conductivity vs the dark conductivity? What is the ratio of conductivity due to holes vs the conductivity due to electrons under illumination? How about in the dark? 200 Nmarrow_forward
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning