Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Chapter 3, Problem 56P
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Chapter 3 Solutions
Introductory Circuit Analysis (13th Edition)
Ch. 3 - Convert the following to mils: 0.2Â in. 1/32Â in....Ch. 3 - Calculate the area in circular mils (CM) of wires...Ch. 3 - Prob. 3PCh. 3 - What is the resistance of a copper wire 200 ft...Ch. 3 - What is the area in circular mils of an aluminum...Ch. 3 - A 2.2 resistor is to be made of nichrome wire. If...Ch. 3 - What is the diameter in inches of a copper wire...Ch. 3 - A wire 1000 ft long has a resistance of 0.5 and an...Ch. 3 - A contractor is concerned about the length of...Ch. 3 - What is the cross-sectional area in circular mile...
Ch. 3 - Prob. 11PCh. 3 - Determine the increase in resistance of a copper...Ch. 3 - What is the new resistance level of a copper wire...Ch. 3 - In construction the two most common wires employed...Ch. 3 - Compare the area of a #12 wire with the area of a...Ch. 3 - Compare the area of a #20 hookup wire to a #10...Ch. 3 - For the system in Fig. 3.46, the resistance of...Ch. 3 - From Table 3.2, determine the maximum permissible...Ch. 3 - The resistance of a copper wire is 2 at room...Ch. 3 - The resistance of an aluminum bus-bar is 0.02 at...Ch. 3 - The resistance of a copper wire is 1.2 at room...Ch. 3 - The resistance of a copper wire is 25m at a...Ch. 3 - The resistance of a copper wire is 1 at 20C (room...Ch. 3 - If the resistance of 1000 ft of wire is about 1 at...Ch. 3 - Verify the value of 20 for copper in Table 3.4 by...Ch. 3 - Prob. 26PCh. 3 - Prob. 27PCh. 3 - A 22 wire-wound resistor is rated at +200PPM for a...Ch. 3 - A 100 wire-wound resistor is rated at +100PPM for...Ch. 3 - What is the approximate increase in size from a 1...Ch. 3 - If the resistance between the outside terminals of...Ch. 3 - If the wiper arm of a linear potentiometer is...Ch. 3 - Show the connections required to establish 4k...Ch. 3 - Find the range in which a resistor having the...Ch. 3 - Find the color code for the following 10%...Ch. 3 - Is there an overlap in coverage between 20...Ch. 3 - Given a resistor coded yellow, violet, brown,...Ch. 3 - How would Fig. 3.26(a) change if the resistors of...Ch. 3 - Find the value of the following surface mount...Ch. 3 - Find the conductance of each of the following...Ch. 3 - Find the conductance of 1000 ft of #12 AWG wire...Ch. 3 - Find the conductance of a 10,20 and 100 resistor...Ch. 3 - The conductance of a wire is 100 S. If the area of...Ch. 3 - Why do you never apply an ohmmeter to a live...Ch. 3 - How would you check the status of a fuse with an...Ch. 3 - How would you determine the on and off states of a...Ch. 3 - How would you use an ohmmeter to check the status...Ch. 3 - Using metric units, determine the length of a...Ch. 3 - Repeat Problem 11 using metric units; that is,...Ch. 3 - If the sheet resistance of a tin oxide sample is...Ch. 3 - Determine the width of a carbon resistor having a...Ch. 3 - Derive the conversion factor between (CM-/ft) and...Ch. 3 - In your own words, review what you have learned...Ch. 3 - Visit your local library and find a table listing...Ch. 3 - Find at least one article on the application of...Ch. 3 - Using the required 1MA/cm2 density level for...Ch. 3 - Research the SQUID magnetic field detector and...Ch. 3 - Find the resistance of the thermistor having the...Ch. 3 - Using the characteristics of Fig. 3.38, determine...Ch. 3 - Referring to Fig. 3.40(a), find the terminal...
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- Q3:- A bar of p-type silicon, has a cross-sectional area A = 106 cm? and a length L= 1.2x10-³ cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?arrow_forwardsolve all partsarrow_forwardWhich of the following statements is false? A. We can create an extrinsic semiconductor materials by adding impurities to an intrinsic semiconductors. B. A pentavalent impurity addition to an intrinsic semiconductor gives N-type semiconductor. C. N-type semiconductor has more holes than the free electrons that contribute to the conduction of current. D. The P-type semiconductors have more holes than the free electrons.arrow_forward
- A noncontributory semiconductor has some holes in room temperature. What causes these holes?Please select one:a.Valuation electronsb.Dopingc.Free electronsd.Thermal energyarrow_forwardConsider a bar of semiconductor illuminated as shown in Figure P3.1. a. Sketch the concentrations of electrons and holes as functions of position. b. In which direction(s) will the electrons diffuse? Holes? c. In what directions do the electron and hole diffusion currents go? d. Explain why a plot of voltage versus position along the length of the sample is as shown in the figure. Figure P3.1 (х)Лarrow_forwardThe linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differarrow_forward
- a) With the aid of illustrations and using Silicon, describe what an intrinsic semiconductor material is. (b) With the aid of illustrations and using Silicon, describe what an extrinsic N type semiconductor material is. (c) With the aid of illustrations and using Silicon, describe what an extrinsic P type semiconductor material is. (d) With the aid of illustrations, describe what happens when P and N materials are joined/fused together and what is formed across the join. Then describe and illustrate how the formation at the junction can be controlled. (e) Give clear illustrations of characteristics for GERMANIUM and SILICON DIODES and say what is the threshold value (Vt) for Silicon and Germanium.arrow_forwardi need the answer quicklyarrow_forwardP-types silicon sample is 0.2cm long and has a rectangular cross section 0.03cm² .The accepter concentration is 5x10^18 holes/cm³. The mobility is 100. A current of 10µA exists in the bar. Determine the electron and hole concentrations, the conductivity, current density,velocity of electrons, the voltage across the bar and reristance.ni=10^10.arrow_forward
- i need the answer quicklyarrow_forwardQuestion 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junctionarrow_forwardA thermal oxide of thickness 100 nm needs to be grown on a silicon wafer (100) in dry oxygen. If the process integration issue requires having a temperature not higher than 1150 C, determine the time required to obtain the desired thickness. The wafer is put back into the furnace and used with steam to obtain a total thickness of .5um. Calculate the time taken to obtain the additional thickness.arrow_forward
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