Matlab
6th Edition
ISBN: 9781119299257
Author: Amos Gilat
Publisher: WILEY CONS
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kr(S+3)
5+5
5+1
5(5+2)(5765+18)
S-1
5+35+4
For the control system, flat is Plate V
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fit= 3-t
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Chapter 3 Solutions
Matlab
Ch. 3 - Prob. 1PCh. 3 - For the function y=x4ex, calculate the value of y...Ch. 3 - For the function y=(x+yx+3)(1+2x2)x3 , calculate...Ch. 3 - For the function y=4sinx+6(cos2x+sinx)2 ,...Ch. 3 - The radius, r, of a sphere can be calculated from...Ch. 3 - Prob. 6PCh. 3 - The remaining loan balance, B, of a fixed payment...Ch. 3 - Prob. 8PCh. 3 - Prob. 9PCh. 3 - The angle between two vectors u1=x1i+y1j+z1k and...
Ch. 3 - The following vector is defined in MATLAB: d=[2 4...Ch. 3 - The following two vectors are defined in MATLAB:...Ch. 3 - Define the vector v= [1 3 5 7]. Then use the...Ch. 3 - Define the vector v=[5 4 3 2]. Then use the vector...Ch. 3 - Define x and y as the vectors x= [0.5, 1, 1.5, 2,...Ch. 3 - Define r and s as scalars r = 1.6 × 103 and s =...Ch. 3 - The area of a triangle ABC can be calculated by...Ch. 3 - Prob. 18PCh. 3 - The center of mass, ( x , y, z). of n particles...Ch. 3 - Prob. 20PCh. 3 - The maximum distance s and the maximum height h...Ch. 3 - Use MATLAB to show that the sum of the infinite...Ch. 3 - Use MATLAB to show that the sum of the infinite...Ch. 3 - The natural exponential function can be expressed...Ch. 3 - Show that limx/3sin(x/3)4cos2x1=36 . Do this by...Ch. 3 - Show that limx05sin(6x)4x=7.5. Do this by first...Ch. 3 - The Hazen Williams equation can be used to...Ch. 3 - The monthly lease payment. Pmt, of a new car can...Ch. 3 - Create the following three matrices: A= 537206489...Ch. 3 - Use the matrics A, B, and C from the previous...Ch. 3 - Create a 33 matrix A having random integer values...Ch. 3 - The magic square is an arrangement of numbers in a...Ch. 3 - Solve the following system of three linear...Ch. 3 - Solve the following system of six linear...Ch. 3 - A football stadium has 100.000 seats. In a game...Ch. 3 - A food company manufactures five types of 8-oz...Ch. 3 - The electrical circuit shown consists of resistors...
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- H.W.(1): Consider the unity feedback control system with forward transfer function as: Draw Nyquist plot G(s) ELEC 3.2 s(s+2.5)(s+4)arrow_forwardRes) kp (S+3) S+5 5+1 S-1 S(S+2)(5765+18) XXX 52+35+4 For the control system, Plot Nyquist Plot Cestarrow_forwardV Res) ke(S+3) S+5 5+1 5(5+2)(5765+18) S-1 XX 5+35+4 For the control system, Plot Nyquist Plot, by MATLAB Cestarrow_forward
- H.W.(2): Draw Nyquist plot ERIG Consider the unity feedback control system with forward transfer function as: قسم الهندسة الكهربائية ١٢ = 8 s(s + 2.2) G(S)arrow_forwardQ6 The FET shown in Fig. 1.43 has gm = 3.4mS and rd = 100 K2. Find the approximate lower cutoff frequency. Ans: 735.1 Hz. 1.5ΜΩ 0.02µF 25V is this circuts feedback or a voltage converter, and why is it required to be solve using approximate 21 want a detailed explanation of each 2ΚΩ 0.02µF HH Solution step you take. 20 ΚΩ 330 ΚΩ 820ΩΣ 1.0µF G 40kQarrow_forwardwhen ever a flux linking a coil or current changes , an emf is induced in it this is known asarrow_forward
- Draw a sample and hold electronic circuit using op-amp then explain its operation. Note: For the thousandth time, I will raise this question and send the solution using intelligence. Please draw the circle by a human and not using intelligence, otherwise I will not raise the question here. I also have artificial intelligence.arrow_forwardCan you solve for the voltage across 1kohm resistor when both voltage sources are on. Additionally can you solve for when 2V is shorted and 5V is on. Then, when 2V is on and 5V is shortedarrow_forwarda. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 Karrow_forward
- 4. Two different silicon samples maintained at 300K are characterized by the energy band diagrams. Answer the questions that follow after choosing a specific diagram for analysis. a) Do equilibrium conditions prebail? How do you know? b) Sketch the electrostatic potential (V) inside the semiconductor as a function of x. c) Sketch the electric field (ε) inside the semiconductor as a function of x. EF Ec E₁ Ev E₁ EF Ev X X 0 L/2 L 0 L/2 L 3.arrow_forwardSee BOTH images to answer correctly thxarrow_forwarda. An average hole drift velocity of 103 cm/sec results when 2V is applied across a 1 cm long semiconductor bar. What is the hole mobility inside the bar? b. Name the two dominant carrier scattering mechanisms in nondegeneratedly doped semiconductors of device quality. c. For a give semiconductor the carrier mobilities in intrinsic material are (choose one: higher than, lower than, the same as) those in heavily doped material. Briefly explain why the mobilites in intrinsic material are (chosen answer) those in heavily doped material.arrow_forward
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