EBK MANUFACTURING ENGINEERING & TECHNOL
7th Edition
ISBN: 8220100793431
Author: KALPAKJIAN
Publisher: PEARSON
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Chapter 29, Problem 28QTP
It is desired to produce a 500 μm by 500 μm diaphragm, 25 μm thick, in a silicon wafer 250 μm thick.
Given that you will use a wet etching technique, with KOH in water with an etch rate of 1 μm/min, calculate the etching time and the dimensions of the mask opening that you would use on a (100) silicon wafer.
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Chemical milling is used in an aircraft plant to create pockets in wing sections made of an aluminum alloy. The starting thickness of one workpart of interest is 20 mm. A series of rectangular-shaped pockets 12 mm deep are to be etched with dimensions 200 mm by 400 mm. The corners of each rectangle are radiused to 15 mm. The part is an aluminum alloy and the etchant is NaOH. Use Tables in your textbook to determine the penetration rate and etch factor for this combination. Determine (a) metal removal rate in mm3/min, (b) time required to etch to the specified depth, and (c) required dimensions of the opening in the cut and peel maskant to achieve the desired pocket size on the part.
Chapter 29 Solutions
EBK MANUFACTURING ENGINEERING & TECHNOL
Ch. 29 - Define MEMS, SIMPLE, SCREAM, and HEXSIL.Ch. 29 - Give three examples of common...Ch. 29 - Why is silicon often used with MEMS devices?Ch. 29 - Describe bulk and surface micromachining.Ch. 29 - What is the purpose of a spacer layer in...Ch. 29 - What is the main limitation to successful...Ch. 29 - What are common applications for MEMS andMEMS...Ch. 29 - Prob. 8RQCh. 29 - Prob. 9RQCh. 29 - Explain the differences between stereolithography...
Ch. 29 - What is MolTun? What are its main advantages?Ch. 29 - What is HEXSIL?Ch. 29 - What do SIMPLE and SCREAM stand for?Ch. 29 - Describe the difference between isotropic etching...Ch. 29 - Lithography produces projected shapes, so true...Ch. 29 - Which process or processes in this chapter allow...Ch. 29 - What is the difference between chemically reactive...Ch. 29 - The MEMS devices discussed in this chapter are...Ch. 29 - Explain how you would produce a spur gear if...Ch. 29 - Prob. 20QLPCh. 29 - Prob. 21QLPCh. 29 - Prob. 22QLPCh. 29 - Is there an advantage to using the MolTun process...Ch. 29 - The atomic-force microscope probe shown inFig....Ch. 29 - Estimate the natural frequency of the cantilever...Ch. 29 - Using data from Chapter 28, derive the time needed...Ch. 29 - It is desired to produce a 500 m by 500...Ch. 29 - If the Reynolds number for water flow through a...Ch. 29 - Prob. 30SDPCh. 29 - Prob. 31SDPCh. 29 - Prob. 32SDPCh. 29 - Design a micromachine or device that allows the...Ch. 29 - Conduct a literature search and determine the...Ch. 29 - Perform a literature search and write a...
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- Rj gandhiarrow_forward4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si I photoresist 0.5 umarrow_forwardIn the context of 3D printing, what is Fused Deposition Modeling (FDM), and how does it differ from Stereolithography (SLA)?arrow_forward
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