BIO UV Radiation Ultraviolet light is typically divided into three categories. UV-A, with wavelengths between 400 nm and 320 nm, has been linked with malignant melanomas. UV-D radiation which is the primary cause of sunburn and other skin cancers, has wavelengths between 320 nm and 280 nm. Finally, the region known as UV-C extends to wavelengths of 100 nm (a) Find the range of frequencies for UV-B radiation (b) In which of these three categories does radiation with a frequency of 7.9 × 10 14 Hz belong?
BIO UV Radiation Ultraviolet light is typically divided into three categories. UV-A, with wavelengths between 400 nm and 320 nm, has been linked with malignant melanomas. UV-D radiation which is the primary cause of sunburn and other skin cancers, has wavelengths between 320 nm and 280 nm. Finally, the region known as UV-C extends to wavelengths of 100 nm (a) Find the range of frequencies for UV-B radiation (b) In which of these three categories does radiation with a frequency of 7.9 × 10 14 Hz belong?
BIO UV Radiation Ultraviolet light is typically divided into three categories. UV-A, with wavelengths between 400 nm and 320 nm, has been linked with malignant melanomas. UV-D radiation which is the primary cause of sunburn and other skin cancers, has wavelengths between 320 nm and 280 nm. Finally, the region known as UV-C extends to wavelengths of 100 nm (a) Find the range of frequencies for UV-B radiation (b) In which of these three categories does radiation with a frequency of 7.9 × 1014 Hz belong?
Interaction between an electric field and a magnetic field.
You want to fabricate a soft microfluidic chip like the one below. How would you go about
fabricating this chip knowing that you are targeting a channel with a square cross-sectional
profile of 200 μm by 200 μm. What materials and steps would you use and why? Disregard the
process to form the inlet and outlet.
Square Cross Section
1. What are the key steps involved in the fabrication of a semiconductor device.
2. You are hired by a chip manufacturing company, and you are asked to prepare a silicon wafer
with the pattern below. Describe the process you would use.
High Aspect
Ratio
Trenches
Undoped Si Wafer
P-doped Si
3. You would like to deposit material within a high aspect ratio trench. What approach would you
use and why?
4. A person is setting up a small clean room space to carry out an outreach activity to educate high
school students about patterning using photolithography. They obtained a positive photoresist, a
used spin coater, a high energy light lamp for exposure and ordered a plastic transparency mask
with a pattern on it to reduce cost. Upon trying this set up multiple times they find that the full
resist gets developed, and they are unable to transfer the pattern onto the resist. Help them
troubleshoot and find out why pattern of transfer has not been successful.
5. You are given a composite…
Two complex values are z1=8 + 8i, z2=15 + 7 i. z1∗ and z2∗ are the complex conjugate values.
Any complex value can be expessed in the form of a+bi=reiθ. Find r and θ for (z1-z∗2)/z1+z2∗. Find r and θ for (z1−z2∗)z1z2∗ Please show all steps
Chapter 25 Solutions
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