The temperature at which average speed of the helium atoms equal to the escape speed from the earth.

Question

A piece of silicon semiconductor has length L=0.01cm and cross-section in a square shape with an area of A=5×10−4cm2 . The semiconductor is doped with 1012cm−3 Phosphorus atoms and 1017cm−3 Boron atoms. An external electric field E=1.5×104N/C is applied to the silicon piece along the length direction, through the cross section. What is the total current in the silicon at T=300K? Assume the mobility of silicon is 1400cm2V−1s−1 for electrons and 450cm2V−1s−1 for holes, respectively. Assume the intrinsic carrier concentration in silicon is 1010cm−3 . Give your answer in mA, rounded to 3 significant figures. Just enter the number, nothing else.

Answer 1

Question

Chapter 20, Problem 23P

(a)

To determine

The temperature at which average speed of the helium atoms equal to the escape speed from the earth.

(b)

To determine

The temperature at which average speed of the helium atoms equal to the escape speed from the moon.

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A piece of silicon semiconductor has length L=0.01cm and cross-section in a square shape with an area of A=5×10−4cm2 . The semiconductor is doped with 1012cm−3 Phosphorus atoms and 1017cm−3 Boron atoms. An external electric field E=1.5×104N/C is applied to the silicon piece along the length direction, through the cross section. What is the total current in the silicon at T=300K? Assume the mobility of silicon is 1400cm2V−1s−1 for electrons and 450cm2V−1s−1 for holes, respectively. Assume the intrinsic carrier concentration in silicon is 1010cm−3 . Give your answer in mA, rounded to 3 significant figures. Just enter the number, nothing else.

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