(a)
Interpretation:
The valence band, conduction band, and band gap should be determined.
Concept introduction:
The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.
(b)
Interpretation:
The electron population change when silicon is doped with gallium should be shown.
Concept introduction:
The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.
(c)
Interpretation:
The electron population change when silicon is doped with arsenic should be shown.
Concept introduction:
The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher.
(d)
Interpretation:
The electrical conductivity of doped silicon semiconductor with pure silicon should be compared.
Concept introduction:
The band theory is used to explain hardness, electrical conductivity, melting point for different metals. It can be explained as a theory related to set of MOs that have very less energy difference between them. These sets of MOs are also known as bands. Melting point of any metal depends on occupancy of both MOs, bonding and antibonding. When the electron from bonding MO can be excessed easily relative to antibonding MO electrons, then melting point metal is higher
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Chapter 12 Solutions
EBK CHEMISTRY
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- Draw the products of the stronger acid protonating the other reactant. H3C-C=C-4 NH2 KEq CH H3C `CH3 Product acid Product basearrow_forward2. Draw the missing structure(s) in each of the following reactions. The missing structure(s) can be a starting material or the major reaction product(s). C5H10 Br H-Br CH2Cl2 + enant.arrow_forwardDraw the products of the stronger acid protonating the other reactant. KEq H₂C-O-H H3C OH Product acid Product basearrow_forward
- Draw the products of the stronger acid protonating the other reactant. OH KEq CH H3C H3C `CH3 Product acid Product basearrow_forward2. Draw the missing structure(s) in each of the following reactions. The missing structure(s) can be a starting material or the major reaction product(s). Ph H-I CH2Cl2arrow_forward3 attempts left Check my work Draw the products formed in the following oxidative cleavage. [1] 03 [2] H₂O draw structure ... lower mass product draw structure ... higher mass productarrow_forward
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