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You are given an n-type silicon sample doped at Nd = 8.1 x 1015 cm3 and due to carrier generation you have EFn - EF = 1.1 x 103 eV at T = 387 °K. (a) Find the excess carrier concentration On = Sp (5 pts) (b) Determine EFi - EFp (5pts) Note: If T is different from 300 °K, you need to update ni.

You are given an n-type silicon sample doped at Nd = 8.1 x 1015 cm3 and due to carrier generation you have EFn - EF = 1.1 x 103 eV at T = 387 °K. (a) Find the excess carrier concentration On = Sp (5 pts) (b) Determine EFi - EFp (5pts) Note: If T is different from 300 °K, you need to update ni.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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You are given an n-type silicon sample doped at Nd = 8.1 x 1015 cm3 and due to carrier generation you have EFn - EF = 1.1 x 103 eV at T = 387 °K. (a) Find the excess carrier concentration On = Sp (5 pts) (b) Determine EFi - EFp (5pts) Note: If T is different from 300 °K, you need to update ni.
Transcribed Image Text:You are given an n-type silicon sample doped at Nd = 8.1 x 1015 cm3 and due to carrier generation you have EFn - EF = 1.1 x 103 eV at T = 387 °K. (a) Find the excess carrier concentration On = Sp (5 pts) (b) Determine EFi - EFp (5pts) Note: If T is different from 300 °K, you need to update ni.
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