YAdpole having amomentp=3a-5ŷtlong nc is located at Ql1,2)-4) infreespace Find Vat peasy) Ans Vel31

Q: c) Consider an InGaAsP laser diode operating at 2=1310 nm for optical communications. The laser…

A: Part c) Given: -A laser diode operating at 1310 nm.Find: -1) External quantum efficiency.2) External…

Q: 400 (nF ID us 20K Vo o SMS 1. Assume an ideal diode and that the capacitor is initially uncharged.…

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Q: An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X -3 1017 cm-³ and N₂…

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Q: The Zener diode shown below, is specified to have Vz=20V at IZT, IZK = 0.1mA, Izr = 17 mA, and rz =…

A: According to company policy we are allowed to provide solution for only 3 sub parts of one question.…

Q: An abrupt gallium arsenide pn junction at zero bias has dopant concentrations of Nd 1 X 1017 cm 3…

A: We are givenCalculate VbiNote-:The intrinsic carrier concentration of GaAs at 300 K is:The thermal…

Q: An abrupt pn junction, a diode, is fabricated using 1017 acceptor atoms cm-3 on the p side and 10^15…

A: An abrupt pn junction, a diode, is fabricated using 1017 acceptor atoms cm-3 on thep side and 1015…

Q: Assume that the mobility of electrons in silicon at T = 300 K is un 1300 cm²/V-s. Also assume that…

A: We need to find out the mobility at given temperature for electron

Q: A silicon pn junction has the following doping condition: 10^(16)cm³ at n-type side and 10^(17) cm…

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Q: -3 The P region of an abrupt junction diode has a resistivity of 0.1 ohm-cm and the N region has a…

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Q: For the diode parameters given below = 1015atoms/cm³, Np = 1017atoms/cm³, A = 0.025cm², T = 300K, D,…

A: The Answer is

Q: The question is attached to jpeg picture of the circuit:

A: Please find the below answer in which I have explained clearly by step by step. So, please give good…

Q: In the circuit shown below. Let V-33 V and i 28 mA and Voo -0.7 V: iD Vcos(at)V For t = Os, the…

A: In the circuit,  Find the diode current for. Different different time.  We are solving this problem…

Q: Consider an p-type silicon for which the dopant concentration ND = 1015/cm3. Find the electron and…

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Q: 4. For a silicon linearly graded junction with an impurity gradient of 5 x 10'/cm“, (a) calculate…

A: Depletion-width: It is the width of the depletion region. In the region the flow the charges…

Photoconductive Cell

Photoconductive cells are light-sensitive resistors in which resistance is inversely proportionated to light intensity when illuminated. These devices consist of a thin single-crystal or polycrystalline film of composite semiconductor materials. Cadmium sulfide (CdS) is used to make the most commercially available photoconductive particles which are sensitive to light in the visible spectrum. Other less commonly used substances respond to infrared light, but not to the visible spectrum. Such substances are lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe), and so on.