Wires A and B, having equal lengths of 40.0 m and equal diameters of 2.94 mm, are connected in series. A potential difference of 62.9 V is applied between the ends of the composite wire. The resistances are RA = 0.0996 Q and Rg = 0.570 Q. For wire A, what are (a) magnitudeJ of the current density and (b) potential
Wires A and B, having equal lengths of 40.0 m and equal diameters of 2.94 mm, are connected in series. A potential difference of 62.9 V is applied between the ends of the composite wire. The resistances are RA = 0.0996 Q and Rg = 0.570 Q. For wire A, what are (a) magnitudeJ of the current density and (b) potential
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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Transcribed Image Text:Wires A and B, having equal lengths of 40.0 m
and equal diameters of 2.94 mm, are connected
in series. A potential difference of 62.9 V is
applied between the ends of the composite
wire. The resistances are RA = 0.0996 Q and RB
= 0.570 2. For wire A, what are (a) magnitude J
of the current density and (b) potential
difference V? (c) Of what type material is wire
A made (see the table below)? For wire B, what
are (d) J and (e) V? (f) Of what type material is B
made?
Resistivities of Some Materials at Room Temperature (20°C)
Resistivity, p
(N m)
Temperature Coefficient
of Resistivity, a (K¯')
Material
Typical Metals
4.1 x 10-3
4.3 x 10-3
Silver
1.62 x 10-8
Copper
1.69 × 10-8
4.0 x 10-3
4.4 x 10-3
Gold
2.35 x 10-8
Aluminum
2.75 x 10-8
Manganin"
Tungsten
Iron
4.82 x 10-8
0.002 x 10-3
5.25 x 10-8
4.5 x 10-3
6.5 x 10-3
3.9 × 10-3
9.68 x 10-8
Platinum
10.6 x 10-8
Typical Semiconductors
2.5 x 103
Silicon, pure
Silicon, n-type
Silicon, p-type
-70 x 10-3
8.7 x 10-4
2.8 x 10-3
Typical Insulators
1010 – 1014
Glass
Fused quartz
-1016
"An alloy specifically designed to have a small value of a.
*Pure silicon doped with phosphorus impurities to a charge carrier density of 1023 m-3.
"Pure silicon doped with aluminum impurities to a charge carrier density of 1023 m-.
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