Wires A and B, having equal lengths of 41.8 m and equal diameters of 2.89 mm, are connected in series. A potential difference of 61.6 Vv is applied between the ends of the composite wire. The resistances are RA - 0.108 and Rg-0.617 0. For wire A, what are (a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) J and (e) V? (f) Of what type material is B made? Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (n-m) Temperature Coetficient of Resistivity, a (K-) Material Typical Metals 1.62 x 10- 4.1 x 10- 4.3 x 10- 4.0 x 10 4.4 X 10- Silver Copper 1.69 x 10- 2.35 x 10 2.75 x 10 4.82 x 10 5.25 x 10 9.68 x 10 10.6 x 10- Gold Aluminum Manganin Tungsten 0.002 X 10 45 x 10- Iron 6.5 x 10- Platinum 3.9 x 10 Typical Semiconductors 25 x 10 8.7 x 10 2.8 x 10- -70 x 10- Silicon, pure Silicon, n-type Silicon, p-type Typical Insulators 10-104 Glass Fused quartz -10 *An alloy specifically designed to have asmall value of a. "Pure allicon doped with phosphorus impurities to a charge carrier density of 10" m "Pure slicon doped with aluminum impurities to a charge carrier density of 10" m

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Wires A and B, having equal lengths of 41.8 m and equal diameters of 2.89 mm, are connected in series. A potential difference of 61.6 V
is applied between the ends of the composite wire. The resistances are RA = 0.108 0 and Rg - 0.617 0. For wire A, what are (a)
magnitude Jof the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For
wire B. what are (d) Jand (e) V? (f) Of what type material is B made?
Resistivities of Some Materials at Room Temperature (20°C)
Resistivity, p
(N-m)
Temperature Coefficient
of Resistivity, a (K)
Material
Typical Metals
4.1 x 10-
1.62 x 10-
1.69 x 10-
Silver
4.3 x 10-
Copper
Gold
4.0 x 10-
4.4 x 10-
0.002 x 10-
45 x 10-
6.5 x 10-
2.35 x 10
2.75 x 10-
4.82 x 10-
5.25 x 10-
9.68 x 10-
10.6 x 10-
Aluminum
Manganin
Tungsten
Iron
Platinum
3.9 x 10-
Typical Semiconductors
25 x 10
8,7 x 10-
-70 x 10-
Silicon, pure
Silicon, n-type
Silicon, p-type
2.8 x 10-
Typical Insulators
10- 104
~10M
Glass
Fused quartz
"An alloy specifically designed to have a small value ofa.
"Pure silicon doped with phosphorus impurities to a charge carrier density of 10" m
"Pure silicon doped with aluminum impurities to a charge carrier density of 10" m
Units
(a) Ja- Number i
Units
(b) V - Number i
(c)
Units
(d) Jg - Number i
Units
(e) Vg- Number i
(f)
Transcribed Image Text:Wires A and B, having equal lengths of 41.8 m and equal diameters of 2.89 mm, are connected in series. A potential difference of 61.6 V is applied between the ends of the composite wire. The resistances are RA = 0.108 0 and Rg - 0.617 0. For wire A, what are (a) magnitude Jof the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B. what are (d) Jand (e) V? (f) Of what type material is B made? Resistivities of Some Materials at Room Temperature (20°C) Resistivity, p (N-m) Temperature Coefficient of Resistivity, a (K) Material Typical Metals 4.1 x 10- 1.62 x 10- 1.69 x 10- Silver 4.3 x 10- Copper Gold 4.0 x 10- 4.4 x 10- 0.002 x 10- 45 x 10- 6.5 x 10- 2.35 x 10 2.75 x 10- 4.82 x 10- 5.25 x 10- 9.68 x 10- 10.6 x 10- Aluminum Manganin Tungsten Iron Platinum 3.9 x 10- Typical Semiconductors 25 x 10 8,7 x 10- -70 x 10- Silicon, pure Silicon, n-type Silicon, p-type 2.8 x 10- Typical Insulators 10- 104 ~10M Glass Fused quartz "An alloy specifically designed to have a small value ofa. "Pure silicon doped with phosphorus impurities to a charge carrier density of 10" m "Pure silicon doped with aluminum impurities to a charge carrier density of 10" m Units (a) Ja- Number i Units (b) V - Number i (c) Units (d) Jg - Number i Units (e) Vg- Number i (f)
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