What arc the differences between an MS diode, a Schottky diode, and a hot carrier diode? An ideal MS contact is formed between a metal and a semiconductor with PM = x. Under what conditions will the contact be ohmic-like, and under what conditions will the contact be rectifying? %3D The solutions for the electrostatic variables p, 8, and V on the lightly doped side of a p+-n or n*-p junction diode and inside the semiconductor of a comparably doped MS diode are all but identical. Are there any significant differences in the electrostatic formularions?

Elements Of Electromagnetics
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ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
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What arc the differences between an MS diode, a Schottky diode, and a hot carrier
diode?
An ideal MS contact is formed between a metal and a semiconductor with ÞM = x.
Under what conditions will the contact be ohmic-like, and under what conditions will
the contact be rectifying?
The solutions for the electrostatic variables p, 8, and V on the lightly doped side of a
p*.n or n*-p junction diode and inside the semiconductor of a comparably doped
MS diode are all but identical. Are there any significant differences in the clectrostatic
formulations?
Transcribed Image Text:What arc the differences between an MS diode, a Schottky diode, and a hot carrier diode? An ideal MS contact is formed between a metal and a semiconductor with ÞM = x. Under what conditions will the contact be ohmic-like, and under what conditions will the contact be rectifying? The solutions for the electrostatic variables p, 8, and V on the lightly doped side of a p*.n or n*-p junction diode and inside the semiconductor of a comparably doped MS diode are all but identical. Are there any significant differences in the clectrostatic formulations?
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