Vpn Rp EXERCISE PROBLEM Ex 3.3: The transistor in Figure 3.25(a) has parameters VTN = 0.35 V and K₁ = 25 μA/V². The circuit parameters are VDD = 2.2 V, R₁ = 355 km, R₂ = 245 k2, and Rp = 100 ks2. Find ID, VGS, and VDs. (Ans. ID = 7.52 μA, VGS = 0.898 V, VDs = 1.45 V) When the bias condition may not be obvious, which means that we have to do an initial guess: 1. Assume that the transistor is biased in the saturation region, in which case VGS > VTN ID>0, and Vos 2 Vos(sat) 2. Analyze the circuit using the saturation current-voltage relations. 3. Evaluate the resulting bias condition of the transistor. If the assumed parameter values in step 1 are valid, then the initial assumption is correct. 4. 4. If the initial assumption is proved incorrect, then a new assumption must be made and the circuit reanalyzed. Step 3 must then be repeated.

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R₂
Vpp
Ip
Vas
Rp
Vps
EXERCISE PROBLEM
Ex 3.3: The transistor in Figure 3.25(a) has parameters VTN = 0.35 V and
K₁ = 25 μA/V². The circuit parameters are VDD = 2.2 V, R₁ = 355 ks2,
R₂ = 245 k2, and Rp = 100 ks2. Find ID, VGS, and VDs. (Ans. ID = 7.52 μµA,
VGS=0.898 V, VDs = 1.45 V)
When the bias condition may not be obvious, which means that we have to do an
initial guess:
1. Assume that the transistor is biased in the saturation region, in which case VGS
> VTN ID>0, and Vos ≥ Vos(sat)
2. Analyze the circuit using the saturation current-voltage relations.
3. Evaluate the resulting bias condition of the transistor. If the assumed
parameter values in step 1 are valid, then the initial assumption is correct.
4. 4. If the initial assumption is proved incorrect, then a new assumption must be
made and the circuit reanalyzed. Step 3 must then be repeated.
Transcribed Image Text:R₂ Vpp Ip Vas Rp Vps EXERCISE PROBLEM Ex 3.3: The transistor in Figure 3.25(a) has parameters VTN = 0.35 V and K₁ = 25 μA/V². The circuit parameters are VDD = 2.2 V, R₁ = 355 ks2, R₂ = 245 k2, and Rp = 100 ks2. Find ID, VGS, and VDs. (Ans. ID = 7.52 μµA, VGS=0.898 V, VDs = 1.45 V) When the bias condition may not be obvious, which means that we have to do an initial guess: 1. Assume that the transistor is biased in the saturation region, in which case VGS > VTN ID>0, and Vos ≥ Vos(sat) 2. Analyze the circuit using the saturation current-voltage relations. 3. Evaluate the resulting bias condition of the transistor. If the assumed parameter values in step 1 are valid, then the initial assumption is correct. 4. 4. If the initial assumption is proved incorrect, then a new assumption must be made and the circuit reanalyzed. Step 3 must then be repeated.
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