True or False?
Power Amplifier
The power amplifier is an electronic amplifier designed to maximize the signal strength of a given input. The input signal strength is enhanced to a high enough level to drive output devices such as speakers, headphones, RF (Radio frequency) transmitters, etc. Unlike voltage / current amplifiers, the power amplifier is designed to drive core loads directly and is used as a storage block in the amplifier series.
Maximum Efficiency Criterion
In every field of engineering, there is a tremendous use of the machine and all those machines are equipped for their popular work efficiency so it very much important for operation engineers to monitor the efficiency of the machine, planning engineers to check out the efficiency of the machine before installing the machine and design engineers to design machine for higher efficiency than and then the utility will procure their products that will ultimately lead to profit and loss of the company. It indicates the importance of efficiency right from the initial stage as manufacturing units, intermediate stage as planning coordinators, and end-users stage as a utility.
True or False?
- For good amplifier design, transistors are biased in the knee part of the IV-Curves.
- The most fundamental parameter in characterizing the small-signal linear operation of a transistor is the transconductance gm.
- When a resistance is connected in series with the source (or emitter), the Hybrid-Pi model is the most convenient to use.
- Discrete-circuit amplifiers predominantly employ MOSFETs while IC amplifiers predominantly uses BJTs.
- The basic gain cell of IC amplifiers is the CS (CE) amplifier with a current-source load.
- The MOS current mirror has a current transfer ratio of (W/L)1/(W/L)2.
- The internal capacitances of the MOSFET and the BJT cause the amplifier gain to rise at high frequencies.
- The internal MOSFET capacitances that must be considered when evaluating the frequency performance are the gate capacitances and the junction capacitances.
- Channel modulation causes Id to increase in the saturation mode.
- When Vgs=Vt, the channel charge beneath the gate is inverted.
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