TRUE OR FALSE A. Diffusion of charge carriers in a p-n junction is dependent on the concentration gradient of majority charge carriers. B. Outside thermal equilibrium, band bending may disappear if a large enough reverse bias is applied to the p-n junction.

TRUE OR FALSE A. Diffusion of charge carriers in a p-n junction is dependent on the concentration gradient of majority charge carriers. B. Outside thermal equilibrium, band bending may disappear if a large enough reverse bias is applied to the p-n junction.

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

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Electrical Heating Unit

The conversion of electrical energy to heat energy is known as electric heating. The heating system that converts the electrical energy to heat energy for various application is called electrical heating unit. Electricity is employed as the firing mechanism in electric heating systems, which transforms electric current to heat. Electric heaters have heating elements in the form of electric resistors.

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TRUE OR FALSE

A. Diffusion of charge carriers in a p-n junction is dependent on the concentration gradient of majority charge carriers.

B. Outside thermal equilibrium, band bending may disappear if a large enough reverse bias is applied to the p-n junction.

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Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
4 - The figure below shows a part of the energy band diagram of a p-n semiconductor junction. According to the situation shown in the figure, in the equilibrium condition, we can identify the currents as follows: *image attached* ( ) i1:hole diffusion current, i2:electron drift current, i3:hole drift current and i4:electron diffusion current. ( ) i1:hole drift current, i2:electron diffusion current, i3:hole diffusion current and i4:electron drift current. ( ) i1:electron diffusion current, i2:electron diffusion current, i3:hole drift current and i4:hole drift current. ( ) i1:electron drift current, i2:electron diffusion current, i3:hole diffusion current and i4:hole drift current. ( ) i1:hole drift current, i2:electron drift current, i3:hole diffusion current and i4:electron diffusion current.
Draw the circuit diagrams of a p-n junction diode in Forward bias and Reverse bias. Draw the I-V characteristics for the same and discuss the resistance of the junction in both the cases.
9. A pn junction is formed by: a. b. C. b. the boundary of a p-type and an n-type material d. the collision of a proton and neutron 2. The term "bias" means" the recombination of electrons and holes ionization the ratio of majority carriers to minority carriers the amount of current across a diode a DC voltage is applied to control the operation of a device none of the above
Explain the V-I characteristics of a P-N junction diode when it is connected in forward bias and reverse bias. A PN junction diode gives a current of 50 mA at a room temperature of 20 dergee C when the forward bias voltage is 200mV. Determine (a) the saturation current with a negative bias (b) the diode current when room temperature is 30 degree C , and (c) diode current at a forward bias voltage.
Question 3 a) The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. The Fermi level does not include the work required to remove the electron from wherever it came from. With the aid of diagram discuss the importance of the Fermi Energy level, especially its relevance to electron flow in a pn-junction diode. b) Discuss the I/V characteristics curve of a practical Germanium diode and explain in detail how the forward and reverse are achieved. Support your explanation with a suitable circuit diagram with a voltage source and RC components connected across the p-n junction
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This about PN Junctions of semiconductors.
3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.
Question 4
Q1 Assume that each diode has a turn-on voltage 0.7V in the circuit shown in Figure Q1. By using the constant voltage drop model: 1kN D1 D2 2kN 4k2 6V 3V 4V Figure Q1 a) Show that it is not possible that D1 is on and D2 is off. (Hint: show a contradiction) b) Show that both D1 and D2 are on.
Answer all the items. Thanks!