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The steady-state concentration of excess carriers at x = 0 is Sp(0) = n(0) = 2 × 10¹4 cm3 -3 . Assume the following material properties: Hn = 1200 cm²/Vs, Hp = 400 cm²/V s, t, How far inside the semiconductor the excess electrons will go (order of magnitude)? O 0.1 cm 10 cm O 0.001 cm O 1 cm

The steady-state concentration of excess carriers at x = 0 is Sp(0) = n(0) = 2 × 10¹4 cm3 -3 . Assume the following material properties: Hn = 1200 cm²/Vs, Hp = 400 cm²/V s, t, How far inside the semiconductor the excess electrons will go (order of magnitude)? O 0.1 cm 10 cm O 0.001 cm O 1 cm

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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The steady-state concentration of excess carriers at x = 0 is 8p(0) = n(0) = 2 x 10¹4 cm -3 Assume the following material properties: Mn = 1200 cm²/Vs, µp = 400 cm²/Vs, t How far inside the semiconductor the excess electrons will go (order of magnitude)? 0.1 cm 10 cm 0.001 cm O 1 cm
Transcribed Image Text:The steady-state concentration of excess carriers at x = 0 is 8p(0) = n(0) = 2 x 10¹4 cm -3 Assume the following material properties: Mn = 1200 cm²/Vs, µp = 400 cm²/Vs, t How far inside the semiconductor the excess electrons will go (order of magnitude)? 0.1 cm 10 cm 0.001 cm O 1 cm
Consider a bar of a p-type Si that is uniformly doped with Na = 2 × 10¹6 cm-3 at 300K. Light is illuminating the left side of the material as shown in the figure below. Light p type x=0 x
Transcribed Image Text:Consider a bar of a p-type Si that is uniformly doped with Na = 2 × 10¹6 cm-3 at 300K. Light is illuminating the left side of the material as shown in the figure below. Light p type x=0 x
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