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The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be Vpp = 20 V. What is the largest value that can be used for Rp to keep the transistor in the saturation region?

The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be Vpp = 20 V. What is the largest value that can be used for Rp to keep the transistor in the saturation region?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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A simple circuit using an NMOS transistor is snown in the on as an amplifier. The input signal is vs, and the output signal is ip (mA) 40 RDmaz = 30 20 the output voltage for a given input voltage. The load line is a | Kirchhoff's voltage law around the drain loop. By plotting this line he intersection of the two graphs. An example of the resulting graph 10 Load line Part B - Choose the drain resistor ΠΠ ΑΣΦ 333.3 5 Submit Previous Answers Hilt ↓↑ vec 3 V GG X Incorrect; Try Again; 5 attempts remaining 10 RD W Ω Holt 15 The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be VDD = 20 V. What is the largest value that can be used for RD to keep the transistor in the saturation region? Express your answer to three significant figures. ▸ View Available Hint(s) VDD UGS = 5.5 20 UDS (V)
Transcribed Image Text:A simple circuit using an NMOS transistor is snown in the on as an amplifier. The input signal is vs, and the output signal is ip (mA) 40 RDmaz = 30 20 the output voltage for a given input voltage. The load line is a | Kirchhoff's voltage law around the drain loop. By plotting this line he intersection of the two graphs. An example of the resulting graph 10 Load line Part B - Choose the drain resistor ΠΠ ΑΣΦ 333.3 5 Submit Previous Answers Hilt ↓↑ vec 3 V GG X Incorrect; Try Again; 5 attempts remaining 10 RD W Ω Holt 15 The gate bias voltage is chosen to be VGG = 4 V and the drain bias voltage is chosen to be VDD = 20 V. What is the largest value that can be used for RD to keep the transistor in the saturation region? Express your answer to three significant figures. ▸ View Available Hint(s) VDD UGS = 5.5 20 UDS (V)
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