The first step in the production of high purity silicon for Looking for 33 [right] given answers below semiconductors is represented by this equation: SiO2(s) + 2C(s) - Si(s) + 2CO(g) A H° = 689.9 kJ Using the value of A Srxn you calculated from question 10 and/or the value of A G° for the reaction at 25 °C you found in question 11 fınd the minimum temperature in °C at which this reaction is spontaneous. Assume that A H° and A Sº do not vary with temperature.

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The first step in the production of high purity silicon for
semiconductors is represented by this equation: SiO2(s) + 2C(s) -
Looking for 33 [right] given
answers below
Si(s) + 2CO(g) A H° = 689.9 kJ
Using the value of A Srxn you calculated from question 10 and/or
the value of A G° for the reaction at 25 °C you found in question 11,
find the minimum temperature in °C at which this reaction is
spontaneous. Assume that A H° and A Sº do not vary with
temperature.
-271.2 oC
1.912 oC
1639 oC
1912 oC
1614 oC
delta S-rxn
delta G*
The first step in the production of high purity silicon for
semiconductors is represented by this equation: SiO2(s) + 2C(s) →
Si(s) + 2CO(g) A Hº = 689.9 kJ
The first step in the production of high purity silicon for
semiconductors is represented by this equation: SiO2(s) + 2C(s) –→
Si(s) + 2CO(g) A Hº = 689.9 kJ
Using the value of A Srxnº you calculated from question 10,
determine A G° for the reaction at 25 °C.
Find A Srxnº for the production of pure silicon, given the following
data: S° for C = 5.7 J/mol*K, for CO = 197.6 J/mol*K, for Si = 18.8
J/mol*K and for SiO2 = 41.8 J/mol*K.
329.1 kJ/mol
582.3 kJ/mol
O O J/mol*K
O kJ/mol
60.8 J/mol*K
106.8 kJ/mol
O 2314 J/mol*K
O -106.8 kJ/mol
-360.8 J/mol*K
168.9 J/mol*K
Transcribed Image Text:The first step in the production of high purity silicon for semiconductors is represented by this equation: SiO2(s) + 2C(s) - Looking for 33 [right] given answers below Si(s) + 2CO(g) A H° = 689.9 kJ Using the value of A Srxn you calculated from question 10 and/or the value of A G° for the reaction at 25 °C you found in question 11, find the minimum temperature in °C at which this reaction is spontaneous. Assume that A H° and A Sº do not vary with temperature. -271.2 oC 1.912 oC 1639 oC 1912 oC 1614 oC delta S-rxn delta G* The first step in the production of high purity silicon for semiconductors is represented by this equation: SiO2(s) + 2C(s) → Si(s) + 2CO(g) A Hº = 689.9 kJ The first step in the production of high purity silicon for semiconductors is represented by this equation: SiO2(s) + 2C(s) –→ Si(s) + 2CO(g) A Hº = 689.9 kJ Using the value of A Srxnº you calculated from question 10, determine A G° for the reaction at 25 °C. Find A Srxnº for the production of pure silicon, given the following data: S° for C = 5.7 J/mol*K, for CO = 197.6 J/mol*K, for Si = 18.8 J/mol*K and for SiO2 = 41.8 J/mol*K. 329.1 kJ/mol 582.3 kJ/mol O O J/mol*K O kJ/mol 60.8 J/mol*K 106.8 kJ/mol O 2314 J/mol*K O -106.8 kJ/mol -360.8 J/mol*K 168.9 J/mol*K
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