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The Fermi energy level in silicon at T = 300 Kelvin is as close to the top of the valence band as to the midgap energy. The gap energy (Eg) of silicon is 1.12 eV. (a). Please determine whether the material is n-type or p-type? (b). Calculate the values of no and po.

The Fermi energy level in silicon at T = 300 Kelvin is as close to the top of the valence band as to the midgap energy. The gap energy (Eg) of silicon is 1.12 eV. (a). Please determine whether the material is n-type or p-type? (b). Calculate the values of no and po.

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The Fermi energy level in silicon at T = 300 Kelvin is as close to the top of the valence band as to the midgap energy. The gap energy (Eg) of silicon is 1.12 eV. (a). Please determine whether the material is n-type or p-type? (b). Calculate the values of no and po.
Transcribed Image Text:The Fermi energy level in silicon at T = 300 Kelvin is as close to the top of the valence band as to the midgap energy. The gap energy (Eg) of silicon is 1.12 eV. (a). Please determine whether the material is n-type or p-type? (b). Calculate the values of no and po.
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