The electron concentration in silicon at T = 300 K is no = 2 × 10° cm 3. (a) Deter- mine the position of the Fermi level with respect to the valence band energy level. (b) Determine po. (c) Is this n- or p-type material? 4.19
The electron concentration in silicon at T = 300 K is no = 2 × 10° cm 3. (a) Deter- mine the position of the Fermi level with respect to the valence band energy level. (b) Determine po. (c) Is this n- or p-type material? 4.19
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Question 4.19
Transcribed Image Text:4.15 Calculate the ionization energy and radius of the donor electron in germanium using
the Bohr theory.
4.16 Repeat Problem 4.15 for gallium arsenide.
Section 4.3 The Extrinsic Semiconductor
4.17 Silicon at T = 300 K is doped with arsenic atoms such that the concentration of elec-
trons is no = 7 X 1015 cm 3. (a) Find E.- Er. (b) Determine Er - E,. (c) Calculate
Po. (d) Which carrier is the minority carrier? (e) Find Er - Eri-
4.18 The value of po in silicon at T = 300 K is 2 X 1016 cm 3. (a) Determine Er Ey.
(b) Calculate the value of E. – Er. (c) What is the value of no? (d) Determine Er- Er.
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4.19 The electron concentration in silicon at T
300 K is no =
2 X 10 cm 3. (a) Deter-
mine the position of the Fermi level with respect to the valence band
(b) Determine
energy
level.
Po. (c) Is this n- or p-type material?
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