The circuit in Figure 1 shows an example of a D-MOSFET device in a voltage-divider bias circuit configuration. Let Ipss = 8 mA and Vp = - 4V. (i) Identify whether the FET is a n-channel or p-channel D-MOSFET. State your reason. (ii) Design a voltage divider bias network to have a Q-point at Ipo = 5mA, Vps = 8V, R1=1MQ and R1=10R2. Use standard values (refer to APPENDIX I). 20 V RD 10ΜΩ Vo IDss = 8 mA Vp=- 4 V 1 ΜΩ Rs
The circuit in Figure 1 shows an example of a D-MOSFET device in a voltage-divider bias circuit configuration. Let Ipss = 8 mA and Vp = - 4V. (i) Identify whether the FET is a n-channel or p-channel D-MOSFET. State your reason. (ii) Design a voltage divider bias network to have a Q-point at Ipo = 5mA, Vps = 8V, R1=1MQ and R1=10R2. Use standard values (refer to APPENDIX I). 20 V RD 10ΜΩ Vo IDss = 8 mA Vp=- 4 V 1 ΜΩ Rs
Introductory Circuit Analysis (13th Edition)
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Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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![The circuit in Figure 1 shows an example of a D-MOSFET device in a voltage-divider bias circuit configuration. Let Ipss = 8 mA and
Vp = - 4V.
(i) Identify whether the FET is a n-channel or p-channel D-MOSFET. State your reason.
(ii) Design a voltage divider bias network to have a Q-point at IpQ = 5mA, VDs = 8V, R1=1MQ and R1=10R2. Use standard values
(refer to APPENDIX I).
20 V
RD
10MQ
Vo
IDss = 8 m
?
Vp=- 4 V
Vị
1 MQ
Rs
Figure 1](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fe93039df-c3b1-45d2-a950-83c836fcbba6%2F0d229711-f4ff-40d3-a8ae-10d87bbe1277%2Fk4hrrz_processed.png&w=3840&q=75)
Transcribed Image Text:The circuit in Figure 1 shows an example of a D-MOSFET device in a voltage-divider bias circuit configuration. Let Ipss = 8 mA and
Vp = - 4V.
(i) Identify whether the FET is a n-channel or p-channel D-MOSFET. State your reason.
(ii) Design a voltage divider bias network to have a Q-point at IpQ = 5mA, VDs = 8V, R1=1MQ and R1=10R2. Use standard values
(refer to APPENDIX I).
20 V
RD
10MQ
Vo
IDss = 8 m
?
Vp=- 4 V
Vị
1 MQ
Rs
Figure 1
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