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T- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V, VDD=12V (gm=4500µS ).

T- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V, VDD=12V (gm=4500µS ).

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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|- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V , VDD=12V ( gm=4500µS ). II A JFET datasheet gives VGs(OFF) = -4V and Ipss = 5 mA. Determine the values of Ip for VGs from 0 V to -5V in 1V steps. Plot the transfer curve from these data on a graph sheet. III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source
Transcribed Image Text:|- Design a CS amplifier using E-MOSFET with voltage gain 20dB , VGs=5V , VDD=12V ( gm=4500µS ). II A JFET datasheet gives VGs(OFF) = -4V and Ipss = 5 mA. Determine the values of Ip for VGs from 0 V to -5V in 1V steps. Plot the transfer curve from these data on a graph sheet. III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source
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