Some test have been made on a 250 kVA, 800 V, 50 Hz three-phase star connected synchronous generator to determine the voltage regulation of the generator at full-load with a leading power factor of 0.8. The test results are: DC resistance test: VL= 6 V, IL= 25 A. (Coefficient for effective AC resistance is 1.25) Open-circuit test: Ip= 25 A, VL= 532 V Short-circuit test: Ip= 25 A, Isc= 180 A (the nominal full-load current) Draw the equivalent circuit and phasor diagram of the generator. Calculate the voltage regulation and power angle. %3D %3D

Q: Gates and circuits—what's the difference?

A: In the context of digital electronics and computer science, a gate is a basic building block of…

Q: Write background information about  MOFs for Electrochemical Energy Conversion and Storage…

A: MOFs for Electrochemical Energy Conversion and Storage.

Q: What is the difference between a current source and current sink draw diagrams aswell to explain.

A: DIFFERENCE BETWEEN A CURRENT SOURCRE AND CURRENT SINK: 1. When selecting the sort of digital input…

Q: 2. A. What parameters can be measured with a digital multimeter (DMM)? B. How does the DMM measure…

A:

Q: Briefly explain an application of electrical circuits in your given field of study/future career.…

A:

MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

MOSFET stands for Metal Oxide Silicone Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. It is a type of IGFET, which means Insulated Gate Field Effect Transistor. A MOSFET has four-terminals namely gate (G), drain (D), source (S), and body (B). The body of the MOSFET is connected to the source terminal and it forms a three-terminal device. It is used in both the analog and digital circuits.

Power MOSFET

The power MOSFET transistor structures are enhancement types. The voltage rating is enhanced in the enhancement-mode MOSFETs by the use of a drift layer. The MOSFET generally contains four layers. The middle layer is the p-type layer also known as the body, whereas the n-type layer is called the drift layer or region. The drift region decides the breakdown voltage, and hence it is the lightly doped region in power MOSFETs. The first and last layers are the n+ layers. The first layer and the last layers are the source and drain layers. The structure of N-channel MOSFET (e-MOSFET) is n+ p n- n+, but the shape of p-channel is the opposite doping shape.