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silicon chip is encapsulated so that, under steady-state conditions, all the power dissipated by it is transferred by convection for a fluid current with h=1000 W/(m2.K) and Tꚙ=25oC. An aluminum plate (k=237 W/(mK)), 2 mm thick, is placed on the chip surface, the contact resistance on the chip/aluminum interface is 0.5x10-4 (m2.K)/W. If the chip area is 100 mm2 and the maximum allowable temperature is 85 oC, what is the maximum allowable power dissipation on the chip?

silicon chip is encapsulated so that, under steady-state conditions, all the power dissipated by it is transferred by convection for a fluid current with h=1000 W/(m2.K) and Tꚙ=25oC. An aluminum plate (k=237 W/(mK)), 2 mm thick, is placed on the chip surface, the contact resistance on the chip/aluminum interface is 0.5x10-4 (m2.K)/W. If the chip area is 100 mm2 and the maximum allowable temperature is 85 oC, what is the maximum allowable power dissipation on the chip?

Elements Of Electromagnetics
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
Problem 1.1MA
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A silicon chip is encapsulated so that, under steady-state conditions, all the power dissipated by it is transferred by convection for a fluid current with h=1000 W/(m2.K) and Tꚙ=25oC. An aluminum plate (k=237 W/(mK)), 2 mm thick, is placed on the chip surface, the contact resistance on the chip/aluminum interface is 0.5x10-4 (m2.K)/W. If the chip area is 100 mm2 and the maximum allowable temperature is 85 oC, what is the maximum allowable power dissipation on the chip?

 

To=25°C Ph=1000W/m2-K L=2mm Ri0.5xl
Transcribed Image Text:To=25°C Ph=1000W/m2-K L=2mm Ri0.5xl
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