silicon carbide (T ≈ 300 K): k = 490 W/m⋅K Silicon carbide nanowires of diameter D = 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets ofcatalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the dropsare deposited in a pattern, an array of nanowire fins can be grown, forming a silicon carbide nano-heat sink. Consider finned andunfinned electronics packages in which an extremely small, 10 µm x 10 μm electronics device is sandwiched between two d = 100-nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of h = 1.0×105W/m².K exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide fins, which are eachL = 300 nm long. Each nano-heat sink includes a 50 × 50 array of nanofins. Determine the maximum allowable heat rate that can begenerated by the electronic device so that its temperature is maintained at T, < 75°C for (a) the unfinned and (b) the finned packages.T., h-W= 10 μm-T., hThUnfinned(a) 9₁ =(b) 9₂ =iiDThNano-finnedWWT

The diameter of silicon carbide nanowires (D) = 15 nm = 1510-9 mThe thickness of silicon carbide…

th cases, the coolant is a dielectric liquid at 20°C. A heat transfer c of the unfinned package and on all surfaces of the exposed silicon nk includes a 50 x 50 array of nanofins. Determine the maximum a that its temperature is maintained at T, < 75°C for (a) the unfinn

th cases, the coolant is a dielectric liquid at 20°C. A heat transfer c of the unfinned package and on all surfaces of the exposed silicon nk includes a 50 x 50 array of nanofins. Determine the maximum a that its temperature is maintained at T, < 75°C for (a) the unfinn

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

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Concept explainers

Strengthening of Alloys

Strengthening of the alloys is required as metals become weak due to various lattice defects, metal bonding phenomena. The strength of the metals is not enough for any mechanical work. The internal dislocations of any metals arise due to forming processes. Due to the movement of these dislocations, the metals are plastically deformed.

Question

silicon carbide (T ≈ 300 K): k = 490 W/m⋅K

Silicon carbide nanowires of diameter D = 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of
catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops
are deposited in a pattern, an array of nanowire fins can be grown, forming a silicon carbide nano-heat sink. Consider finned and
unfinned electronics packages in which an extremely small, 10 µm x 10 μm electronics device is sandwiched between two d = 100-
nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of h = 1.0×105
W/m².K exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide fins, which are each
L = 300 nm long. Each nano-heat sink includes a 50 × 50 array of nanofins. Determine the maximum allowable heat rate that can be
generated by the electronic device so that its temperature is maintained at T, < 75°C for (a) the unfinned and (b) the finned packages.
T., h
-W= 10 μm-
T., h
Th
Unfinned
(a) 9₁ =
(b) 9₂ =
i
i
D
Th
Nano-finned
W
W
T

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