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Saturation region Ip = 0.5Km ( VGs – VTh )² (1 + 2 Vps ) , VDs 2 VGs – VTh , VGs > VTh Ip = 0, VGs SVTh. Linear or Ohmic region Ip = Kn ( VGs – VTh - VDs /2 ) VDs , VDs < VGS - VTh VGs > VTh where Kn is a conductivity constant determined by the physics and dimensions of the device , VTh is the threshold voltage and 2 is the channel length modulation index . In all problems concerning the N-channel MOSFET, take Kn = 100 mA/V² , VTh = 1.0 V and 2 = 0, unless stated otherwise. For any P-channel complementary MOSFET use the same parameters as for the N-channel but with an appropriate polarity and sign adjustment. . Note#2 – For all active NPN and PNP transistors the current gain , B, is equal to B = 160 , VA = 00 , and in conducting condition VBE 0.7 V and VT = 25 mV near room %3D temperature, unless stated otherwise.

Saturation region Ip = 0.5Km ( VGs – VTh )² (1 + 2 Vps ) , VDs 2 VGs – VTh , VGs > VTh Ip = 0, VGs SVTh. Linear or Ohmic region Ip = Kn ( VGs – VTh - VDs /2 ) VDs , VDs < VGS - VTh VGs > VTh where Kn is a conductivity constant determined by the physics and dimensions of the device , VTh is the threshold voltage and 2 is the channel length modulation index . In all problems concerning the N-channel MOSFET, take Kn = 100 mA/V² , VTh = 1.0 V and 2 = 0, unless stated otherwise. For any P-channel complementary MOSFET use the same parameters as for the N-channel but with an appropriate polarity and sign adjustment. . Note#2 – For all active NPN and PNP transistors the current gain , B, is equal to B = 160 , VA = 00 , and in conducting condition VBE 0.7 V and VT = 25 mV near room %3D temperature, unless stated otherwise.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Saturation region Ip = 0.5Kn ( VGs - VTh )2 (1 + 2 VDs ) VDs 2 VGs – VTh , VGs > VTh Ip = 0, VGs < VTh . Linear or Ohmic region ID= Kn ( VGS – VTh – VDs /2 ) VDs , VDs < VGS - VTh VGs > VTh where Kn is a conductivity constant determined by the physics and dimensions of the device , VTh is the threshold voltage and 2 is the channel length modulation index . In all problems concerning the N-channel MOSFET, take Kn = 100 mA/V² , VTh = 1.0 V and 2 = 0, unless stated otherwise. For any P-channel complementary MOSFET use the same parameters as for the N-channel but with an appropriate polarity and sign adjustment.. Note#2 – For all active NPN and PNP transistors the current gain , B, is equal to B = 160, VA = 00 , and in conducting condition VBE - 0.7 V and VT = 25 mV near room temperature, unless stated otherwise.
Transcribed Image Text:Saturation region Ip = 0.5Kn ( VGs - VTh )2 (1 + 2 VDs ) VDs 2 VGs – VTh , VGs > VTh Ip = 0, VGs < VTh . Linear or Ohmic region ID= Kn ( VGS – VTh – VDs /2 ) VDs , VDs < VGS - VTh VGs > VTh where Kn is a conductivity constant determined by the physics and dimensions of the device , VTh is the threshold voltage and 2 is the channel length modulation index . In all problems concerning the N-channel MOSFET, take Kn = 100 mA/V² , VTh = 1.0 V and 2 = 0, unless stated otherwise. For any P-channel complementary MOSFET use the same parameters as for the N-channel but with an appropriate polarity and sign adjustment.. Note#2 – For all active NPN and PNP transistors the current gain , B, is equal to B = 160, VA = 00 , and in conducting condition VBE - 0.7 V and VT = 25 mV near room temperature, unless stated otherwise.
-For the MOSFET amplifier shown in fig.1 determine suitable values for the capacitors Cc1 , Cc2 and Cs for a full mid-band voltage gain starting at a minimum frequency of 100 Hz. Determine the small signal mid-band voltage gain, Av , Ay = Vo / Vị , the input impedance, Zin , Zin = vi/ ij and the power gain Ap = po / pi . What is the amplifier voltage gain , Ag , defined as Ag = Vo / Vg ? What will be the higher cutoff frequency ( fch ) due to the dominant pole associated with this circuit, given that the drain-to-gate capacitance is , Cdg = 32 pF and gate-to-source capacitance is equal to Cgs = 100 pF ? (Hint: draw the small signal equivalent circuit to identify the poles) Circuit parameters are as follows: VDD = 24 V, R1 = 700 k2 , R2 = 100 k2 , Rs = 120 2, Rp = 1.2 k2 , RL = 1.2 k2 and Rg , the generator resistance is equal to Rg =35 Ω . fhe = , Cc1 = , Cc2 = Cs = ............. .............. Zin Av Ap = Po / Pi =.............. Ag ........ V DD RD R1 Сс2 Vo Po Сс1 RL G Rg Vg Cs Vi R2 Rs ' Pi Signal gen. O V Gnd. Fig. 1
Transcribed Image Text:-For the MOSFET amplifier shown in fig.1 determine suitable values for the capacitors Cc1 , Cc2 and Cs for a full mid-band voltage gain starting at a minimum frequency of 100 Hz. Determine the small signal mid-band voltage gain, Av , Ay = Vo / Vị , the input impedance, Zin , Zin = vi/ ij and the power gain Ap = po / pi . What is the amplifier voltage gain , Ag , defined as Ag = Vo / Vg ? What will be the higher cutoff frequency ( fch ) due to the dominant pole associated with this circuit, given that the drain-to-gate capacitance is , Cdg = 32 pF and gate-to-source capacitance is equal to Cgs = 100 pF ? (Hint: draw the small signal equivalent circuit to identify the poles) Circuit parameters are as follows: VDD = 24 V, R1 = 700 k2 , R2 = 100 k2 , Rs = 120 2, Rp = 1.2 k2 , RL = 1.2 k2 and Rg , the generator resistance is equal to Rg =35 Ω . fhe = , Cc1 = , Cc2 = Cs = ............. .............. Zin Av Ap = Po / Pi =.............. Ag ........ V DD RD R1 Сс2 Vo Po Сс1 RL G Rg Vg Cs Vi R2 Rs ' Pi Signal gen. O V Gnd. Fig. 1
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