Saturation regionIp = 0.5Kn ( VGs - VTh )2 (1 + 2 VDs )VDs 2 VGs – VTh ,VGs > VThIp = 0, VGs < VTh .Linear or Ohmic regionID= Kn ( VGS – VTh – VDs /2 ) VDs , VDs < VGS - VThVGs > VThwhere Kn is a conductivity constant determined by the physics and dimensions of thedevice , VTh is the threshold voltage and 2 is the channel length modulation index .In all problems concerning the N-channel MOSFET, take Kn = 100 mA/V² , VTh = 1.0 Vand 2 = 0, unless stated otherwise. For any P-channel complementary MOSFET use thesame parameters as for the N-channel but with an appropriate polarity and signadjustment..Note#2 – For all active NPN and PNP transistors the current gain , B, is equal to B = 160,VA = 00 , and in conducting condition VBE - 0.7 V and VT = 25 mV near roomtemperature, unless stated otherwise. -For the MOSFET amplifier shown in fig.1 determine suitable values for thecapacitors Cc1 , Cc2 and Cs for a full mid-band voltage gain starting at a minimumfrequency of 100 Hz. Determine the small signal mid-band voltage gain, Av , Ay = Vo / Vị ,the input impedance, Zin , Zin = vi/ ij and the power gain Ap = po / pi .What is the amplifier voltage gain , Ag , defined as Ag = Vo / Vg ? What will be the highercutoff frequency ( fch ) due to the dominant pole associated with this circuit, given thatthe drain-to-gate capacitance is , Cdg = 32 pF and gate-to-source capacitance is equal toCgs = 100 pF ? (Hint: draw the small signal equivalent circuit to identify the poles)Circuit parameters are as follows:VDD = 24 V, R1 = 700 k2 , R2 = 100 k2 , Rs = 120 2,Rp = 1.2 k2 , RL = 1.2 k2 and Rg , the generator resistance is equal to Rg=35 Ω .fhe =, Cc1 =, Cc2 =Cs = ...........................ZinAvAp = Po / Pi =..............Ag........VDDRDR1Сс2VoPoСс1RLGRgVgCsViR2Rs' PiSignalgen.O V Gnd.Fig. 1

Saturation region Ip = 0.5Km ( VGs – VTh )² (1 + 2 Vps ) , VDs 2 VGs – VTh , VGs > VTh Ip = 0, VGs SVTh. Linear or Ohmic region Ip = Kn ( VGs – VTh - VDs /2 ) VDs , VDs < VGS - VTh VGs > VTh where Kn is a conductivity constant determined by the physics and dimensions of the device , VTh is the threshold voltage and 2 is the channel length modulation index . In all problems concerning the N-channel MOSFET, take Kn = 100 mA/V² , VTh = 1.0 V and 2 = 0, unless stated otherwise. For any P-channel complementary MOSFET use the same parameters as for the N-channel but with an appropriate polarity and sign adjustment. . Note#2 – For all active NPN and PNP transistors the current gain , B, is equal to B = 160 , VA = 00 , and in conducting condition VBE 0.7 V and VT = 25 mV near room %3D temperature, unless stated otherwise.

Saturation region Ip = 0.5Km ( VGs – VTh )² (1 + 2 Vps ) , VDs 2 VGs – VTh , VGs > VTh Ip = 0, VGs SVTh. Linear or Ohmic region Ip = Kn ( VGs – VTh - VDs /2 ) VDs , VDs < VGS - VTh VGs > VTh where Kn is a conductivity constant determined by the physics and dimensions of the device , VTh is the threshold voltage and 2 is the channel length modulation index . In all problems concerning the N-channel MOSFET, take Kn = 100 mA/V² , VTh = 1.0 V and 2 = 0, unless stated otherwise. For any P-channel complementary MOSFET use the same parameters as for the N-channel but with an appropriate polarity and sign adjustment. . Note#2 – For all active NPN and PNP transistors the current gain , B, is equal to B = 160 , VA = 00 , and in conducting condition VBE 0.7 V and VT = 25 mV near room %3D temperature, unless stated otherwise.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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