Q2/ Consider a bar of p-type silicon that is uniformly doped to a value of N₁ = 2 x 106 cm³ at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure. The steady-state concentration of excess carriers generated at x-0 is (0)=2x10¹4 cm³. Assume the following parameters: H= 1200 cm² /V-S, Tho = 106 s. Neglecting surface effects, (a) determine the steady-state excess electron concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron diffusion current density as a function of distance into the semiconductor. Light x=0 p type

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Q2/ Consider a bar of p-type silicon that is uniformly
doped to a value of N₁ = 2 x 106 cm³ at T = 300 K. The
applied electric field is zero. A light source is incident on
the end of the semiconductor as shown in Figure. The
steady-state concentration of excess carriers generated at
x-0 is (0)=2x10¹4 cm³. Assume the following parameters: H = 1200 cm² /V-s, Tho = 106 s.
Neglecting surface effects, (a) determine the steady-state excess electron concentrations as a
function of distance into the semiconductor, and (b) calculate the steady-state electron diffusion
current density as a function of distance into the semiconductor.
Light
x=0
p type
Transcribed Image Text:Q2/ Consider a bar of p-type silicon that is uniformly doped to a value of N₁ = 2 x 106 cm³ at T = 300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure. The steady-state concentration of excess carriers generated at x-0 is (0)=2x10¹4 cm³. Assume the following parameters: H = 1200 cm² /V-s, Tho = 106 s. Neglecting surface effects, (a) determine the steady-state excess electron concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron diffusion current density as a function of distance into the semiconductor. Light x=0 p type
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