Question 9 6.30 An n-type silicon semiconductor, doped at Na = 4 x 10¹6 cm3, is steadily illuminated such that g' = 2 X 1021 cm3 s-¹. Assume To = = 10-s and Tpo = 5 x 10-7 (a) Determine the thermal-equilibrium value of EF - EF. (b) Calculate the quasi- Fermi levels for electrons and holes with respect to EF. (c) What is the difference (in eV) between EFA and EF?

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Question 9
6.30 An n-type silicon semiconductor, doped at Na = 4 x 10¹6 cm 3 is steadily illuminated
such that g' = 2 X 102¹ cm³s-¹. Assume To = 10s and Tpo = 5 x 10-7 s
-3
(a) Determine the thermal-equilibrium value of EF - EFi. (b) Calculate the quasi-
Fermi levels for electrons and holes with respect to EF. (c) What is the difference (in
eV) between EF and EF?
Transcribed Image Text:Question 9 6.30 An n-type silicon semiconductor, doped at Na = 4 x 10¹6 cm 3 is steadily illuminated such that g' = 2 X 102¹ cm³s-¹. Assume To = 10s and Tpo = 5 x 10-7 s -3 (a) Determine the thermal-equilibrium value of EF - EFi. (b) Calculate the quasi- Fermi levels for electrons and holes with respect to EF. (c) What is the difference (in eV) between EF and EF?
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