QUESTION 4 a) An extrinsic semiconductor may contain both donor and acceptor atoms and their related donor and acceptor levels, respectively, in its energy band diagram. Co-doping of suitable dopants in Galium arsenide (GaAs), which has a band gap, E, of 1.42 eV, can produce a donor level around 0.02 eV below the conduction band as well as an acceptor level of around 0.01 eV above the valence band. If an electron at the donor level goes down to an emply acceptor level, calculate the wavelength of the photon emitted (in nm). Sketch a simple energy band diagram to illustrate the transition. (Given Plank's constant 4.13567 x10evs and he 1240 e nm)
QUESTION 4 a) An extrinsic semiconductor may contain both donor and acceptor atoms and their related donor and acceptor levels, respectively, in its energy band diagram. Co-doping of suitable dopants in Galium arsenide (GaAs), which has a band gap, E, of 1.42 eV, can produce a donor level around 0.02 eV below the conduction band as well as an acceptor level of around 0.01 eV above the valence band. If an electron at the donor level goes down to an emply acceptor level, calculate the wavelength of the photon emitted (in nm). Sketch a simple energy band diagram to illustrate the transition. (Given Plank's constant 4.13567 x10evs and he 1240 e nm)
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