Question 2: For the NMOS shown VTHN = 800 mV KP, = 120 uA/V?, and (W/L) = (10/2), Calculate the drain current Ip and VDs. VDD R1 100k M1 L= 2u N_tu Vin W = 10u 1.1
Question 2: For the NMOS shown VTHN = 800 mV KP, = 120 uA/V?, and (W/L) = (10/2), Calculate the drain current Ip and VDs. VDD R1 100k M1 L= 2u N_tu Vin W = 10u 1.1
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Please answer the question 2 with details on how to do it. Please make handwriting legible. Thank you.

Transcribed Image Text:### Question 2:
For the NMOS shown, with the following parameters:
- \(V_{TH} = 800 \, \text{mV}\)
- \(K_P = 120 \, \mu \text{A/V}^2\)
- \((W/L) = (10/2)\)
Calculate the drain current \(I_D\) and \(V_{DS}\).
### Circuit Description:
The schematic diagram shows an NMOS transistor circuit. Key components include:
- **NMOS Transistor (M1):**
- Width (W) = 10 µm
- Length (L) = 2 µm
- The transistor is connected to ground at its source terminal.
- **Resistor (R1):**
- Resistance = 100 kΩ
- Connected in series between the drain of M1 and the positive voltage supply (\(V_{DD}\)).
- **Voltage Supplies:**
- \(V_{DD}\) is at 5V.
- \(V_{in}\) is at 1.1V.
### Node Connections:
- **Gate of M1:** Connected to \(V_{in}\) (1.1V).
- **Source of M1:** Grounded.
- **Drain of M1:** Connected through R1 to \(V_{DD}\).
Using these components and values, the task is to compute the NMOS drain current \(I_D\) and the drain-to-source voltage \(V_{DS}\).
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