QUESTION 1 What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K doped with 3.33*10^17/cc Phosphorous atoms and illuminated with 5*10^18 photons/(cc*second), and a minority carrier lifetime of 8.29*10^-9 seconds. Three significant digits and fixed point notation.
QUESTION 1 What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K doped with 3.33*10^17/cc Phosphorous atoms and illuminated with 5*10^18 photons/(cc*second), and a minority carrier lifetime of 8.29*10^-9 seconds. Three significant digits and fixed point notation.
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Question 1
Transcribed Image Text:QUESTION 1
What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K doped with 3.33*10^17/cc Phosphorous
atoms and illuminated with 5*10^18 photons/(cc*second), and a minority carrier lifetime of 8.29*10^-9 seconds. Three
significant digits and fixed point notation.
QUESTION 2
What is the average distance in microns an electron can travel with a diffusion coefficient of 25 cm^2/s if the electron lifetime
is 9.655 microseconds. Three significant digits and fixed point notation.
.155
QUESTION 3
What is the resistivity in ohm*cm of silicon doped with 5.62*10^14 Arsenic atoms and 1.68*10^18 Aluminum atoms assuming
the electron and hole mobilities are 1500 and 500 cm^2/(V*s). Three significant digits and fixed point notation.
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