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QUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 1019cm3].

QUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 1019cm3].

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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09:23 Solid State Questions2021 QUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 1019cm-3]. QUESTION:2 Two semiconductor materials have exactly the same properties except that material A has a band gap energy of 1.0eV and material B has a band gap energy of 1.2eV. Determine the ratio of n of material A to that of material B for T=30OK. QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n-type and doped with 1 x 1015 cm3 donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 1019 cm-3 and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 1015 cm³ at T=400K. What is the minimum value of the band gap energy? QUESTION:4 A 10k2 resistor is to be designed to handle a current density of 50A/cm? when a 5V is applied. If this resistor is limited to electric field of E =100 cm?/V-s, calculate: i current passing through the resistor ii cross-sectional area iii length of the resistor iv conductivity v carrier concentration QUESTION: 5 Assume that in an n-type Gallium Arsenide semiconductor at 300K, the electron concentration varies linearly from 1 x 1018 cm-3 to 7 x 1017 cm 3 over a distance of 0.01cm. Determine the diffusion current density if the electron diffusion co-efficient is Dn =225cm?/s
Transcribed Image Text:09:23 Solid State Questions2021 QUESTION: 1 Silicon at T=300K contains a acceptor impurity concentration at Na=1016 cm-3. Determine the concentration of donor impurity atoms that must be added so that the silicon is n-type and the Fermi energy is 0.20eV below the conduction band edge. [Take NC=2.8 x 1019cm-3]. QUESTION:2 Two semiconductor materials have exactly the same properties except that material A has a band gap energy of 1.0eV and material B has a band gap energy of 1.2eV. Determine the ratio of n of material A to that of material B for T=30OK. QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n-type and doped with 1 x 1015 cm3 donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 1019 cm-3 and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 1015 cm³ at T=400K. What is the minimum value of the band gap energy? QUESTION:4 A 10k2 resistor is to be designed to handle a current density of 50A/cm? when a 5V is applied. If this resistor is limited to electric field of E =100 cm?/V-s, calculate: i current passing through the resistor ii cross-sectional area iii length of the resistor iv conductivity v carrier concentration QUESTION: 5 Assume that in an n-type Gallium Arsenide semiconductor at 300K, the electron concentration varies linearly from 1 x 1018 cm-3 to 7 x 1017 cm 3 over a distance of 0.01cm. Determine the diffusion current density if the electron diffusion co-efficient is Dn =225cm?/s
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