Question #1 Intrinsic silicon with a cross sectional area of 10-4 cm becomes a PN junction when it is doped with Np = 1016 cm-3 on one side and NA = 1018 cm-3 on the other. e, = 11.7 for silicon. Assume room temperature (300 K). Find: (1) The built in voltage Vii- (2) The width of the depletion region in micrometers. (3) The magnitude of the charge stored on either side of the depletion region in pC. 1. The built voltage Vii is 2. The width of the depletion re- 3. The charge stored in pC is gion (um) (a) 0.812V (a) 3.84 (b) 0.845V (a) 0.358 (b) 12.76 (c) 0.678V (b) 0.782 (c) 5.25 (d) 0.756V (c) 0.124 (d) 5.25 (e) 0.835V (d) 0.331 (е) 7.34 (f) 0.732V (e) 0.287 (f) 15.5

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
icon
Concept explainers
Question
Question #1 Intrinsic silicon with a cross sectional area of 10-4 cm becomes a PN junction when it is
doped with Np = 1016 cm-3 on one side and NA = 1018 cm-3 on the other. e, = 11.7 for silicon. Assume
room temperature (300 K). Find:
(1) The built in voltage Vbi-
(2) The width of the depletion region in micrometers.
(3) The magnitude of the charge stored on either side of the depletion region in pC.
1. The built voltage Vbi is
2. The width of the depletion re- 3. The charge stored in pC is
gion (um)
(a) 0.812V
(a) 3.84
(b) 0.845V
(a) 0.358
(b) 12.76
(c) 0.678V
(b) 0.782
(c) 5.25
(d) 0.756V
(c) 0.124
(d) 5.25
(e) 0.835V
(d) 0.331
(е) 7.34
(f) 0.732V
(e) 0.287
(f) 15.5
Transcribed Image Text:Question #1 Intrinsic silicon with a cross sectional area of 10-4 cm becomes a PN junction when it is doped with Np = 1016 cm-3 on one side and NA = 1018 cm-3 on the other. e, = 11.7 for silicon. Assume room temperature (300 K). Find: (1) The built in voltage Vbi- (2) The width of the depletion region in micrometers. (3) The magnitude of the charge stored on either side of the depletion region in pC. 1. The built voltage Vbi is 2. The width of the depletion re- 3. The charge stored in pC is gion (um) (a) 0.812V (a) 3.84 (b) 0.845V (a) 0.358 (b) 12.76 (c) 0.678V (b) 0.782 (c) 5.25 (d) 0.756V (c) 0.124 (d) 5.25 (e) 0.835V (d) 0.331 (е) 7.34 (f) 0.732V (e) 0.287 (f) 15.5
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 2 steps with 1 images

Blurred answer
Knowledge Booster
Working and Construction of Diode
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,