Q4: (B): What names are applied to the two types of BJT transistors? Sketch the basic construction of each. Draw the graphic symbol next to each. Which of the transistor currents is always the largest? Which is always the smallest? Which two currents are relatively close in magnitude? How must the two transistor junctions be biased for proper transistor amplifier operation?

Q4: (B): What names are applied to the two types of BJT transistors? Sketch the basic construction of each. Draw the graphic symbol next to each. Which of the transistor currents is always the largest? Which is always the smallest? Which two currents are relatively close in magnitude? How must the two transistor junctions be biased for proper transistor amplifier operation?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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a) How is the input characteristic of a common emitter BJT transistor measured? Input characteristic Draw . b) How is the output characteristic of the transistor measured? Describe and draw . c) Why is the transistor polarized as DC? What happens without DC polarity?
Question
In saturation, what statement correctly describes the operation of a BJT transistor? Select one: a. No current flows through the transistor. Ob. There is a linear relationship between collector and base current. There is a nonlinear relationship between collector current and base current. d. There is an inverted but linear relationship between collector and base current. C.
Question three: Given the BJT transistor characteristics of Figure below: a. Draw load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed- bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rp to establish the resulting operating point. c. What are the resulting values of Ico and Vceq? d. What is the value of ß at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Icsar) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the dc power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1 Ic(mA) 110HA 100 µA 10 9 40 µÃ 5 30 HA 4 20 μΑ 10 HA 10 15 20 25 30 VCE (V)
A. For the configuration shown below in 4(A), find the small signal voltage gain (Voutp-Voutm)/Vin B. For the configuration shown in 4(B), find the following parameters (a) DC value of output voltage, (b) input common mode range and (c) small signal voltage gain when all transistors are in saturation vou/Vin as indicated in the diagram; Assume no body bias on M1 ad M2 For this problem ONLY, assume the following device parameters V7, = \V| = 0.5V;K, = k ,' = 100 µA / V²,a, = a, = 0.01 VDD = 3V (10/1) M, M. (10/1) (10/1) M, |M, (10/1) Voutp 20kΩ м, (200/1) м, м, (10/1) м, Vin (1/1) м, M. (10/1) + Vin DC VAN M, 100HA (1/1) M, M, (10/1) (A) (B) V. =-1V
(iii), Why is the voltage-divider bias the preferred bias configuration? (iv) In a certain voltage-biased npn transistor, VB is 2.95 V. The DC emitter voltage is (a) 0.7 V (b) 2.95 V (c) 2.25 V (v) The emitter current is always (a) greater than the base current (b) less than the collector current (c) greater than the collector current (d) 3.65 V (d) answers (a) and (c)
Explain the transistor amplification action with drawing figure and examples
4. A Darlington transistor is essentially an array of two transistors connected as shown below. Assume both transistors follow our simple model with a current gain of B=100. Determine the maximum value of R2 that will just saturate the transistors, and pass full current through the load resistance R1. v2 V2 R2 PULSE (0 5 0) Q2 NPN R1 10 Q1 NPN V1 24
c) Figure 2.3 shows the circuit diagram of a typical npn BJT common emitter amplifier. The values of RB1-30 kOhm, RB2=10.XY kOhm, Rc-3.XY kOhm, Ic=2.XY mA and Vcc=24 V. If the transistor current gain 3 = 50 determine using the full analysis and assuming VBE = 0.7 V the value of RE, hence identify the location of the Q-point (Ic, VCE, IB and VBE). Now sketch the AC circuit model of this amplifier and determine the value of the ac open circuit voltage gain Av and the ac short circuit current gain Ai. (Assume that Vth = 26 mV). Vin RB1 Cin lin RB2 -10 Rc VB RE + Vcc Vc Cout VE www li Figure 2.3 Vout Ce ¡out x=1 y=7
Please answer all subpart in short please Asap for like this please..
These are all about Bipolar Junction Transistor: Draw a schematic diagram of a basic BJT amplifier circuit with an AC voltage input. Indicate where or in what part of the circuit can you get the amplified AC output voltage. Discuss the switching operation of a BJT. For a BJT to act as a switch, in what two states is it operated? What are the conditions to operate in those two states?