Q3. * Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping concentrations of Na = 10¹6cm-³and Na=10¹5 cm-³. Assume that the intrinsic concentration n = 1.5 x 100 cm-3 and the reverse bias V, = 5V Note/ Your answer -1.035 x 10-12/cm e-16x 10-¹C

Q3. * Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping concentrations of Na = 10¹6cm-³and Na=10¹5 cm-³. Assume that the intrinsic concentration n = 1.5 x 100 cm-3 and the reverse bias V, = 5V Note/ Your answer -1.035 x 10-12/cm e-16x 10-¹C

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Related questions

Q: Exercises: Determine VO and Ifor each circuit in figures. Assume that each of the diode in these…

Q: In the given i-v characteristic below, which load line represent the given circuit? I-V curve for a…

A: We need to find out load line for given circuit

Q: When forward biased, an ideal diode * is one which behaves as a perfect Conductor O None of these…

A: First option is correct. The detailed explanation is provided below.

Q: Consider a p+ n silicon diode at room temperature with the following parameters. Find out the…

A: here we have to find the reverse saturation current density of the silicon diode.Here we assume the…

Q: 5. For each of the following circuits, determine the state of each diode (OFF or ON) and calculate…

A: We can see all the positive terminal of the diodes D1,D2,D3 are connected to different voltage…

Q: A simple diode circuit is shown below comprising a bias voltage VB = 3.6 V, a current limiting…

A: In this question, we need to determine the power wasted( dissipated) across the diode D. We know,…

Q: An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X 1017 cm 3 and N₂ =…

A: Given,

Q: Time left 0:32 If the voltage at the cathode of a diode is -1 V, and the anode is connected to the…

Q: A pn diode has a resistivity of 1 Ω·cm on the p-type side and 0.02 Ω·cm on the n-type side. What is…

A: Given data; Resistivity for p-side = 1 Ω·cm Resistivity for n-side = 0.02 Ω·cm Cross sectional area…

Q: Dreaw the output voltoge waveforem B(t) that is, how the outpat voltoge Vo changes as a fundtion of…

A: Upper Diode is become open circuit when V1 voltage and 3V voltage is applied across the diode…

Q: Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume…

Q: Holes are the major charge carriers in Intrinsic semiconductors n-type semiconductors p-type…

A: Intrinsic semiconductor also known as pure semiconductor as the inpurities are very negligible in it…

Q: The reverse-bias saturation current of the diode in the circuit below is 10-14 A. The current…

A: Given : saturation current Is = 10-14 A Current through diode ID = 1.2 mA To find the closest value…

Q: What would be the barrier potential of a silicon diode when the junction temperature is at 50°C?…

Q: A breakdown diode has iD=−10−6(1+vD/5)3 for −5 V<vD<0 where iD is in amperes. Plot iD versus…

A: The plot for iD vs vD is drawn below:

Q: A forward voltage of 1.75V shifts to the left at a rate 2.65mV per degree centigrade in temperature…

Q: The figure below shows the band diagram of 4 different semiconductor junctions. The junctions…

A: For intrinsic semiconductor Fermi level lies in the middle of Band gap. For P type semiconductor…

Q: What is the value of the voltage dropped across forward-biased silicon diodes that are connected in…

A: Diode is an electronic device in which current flows in one direction only ( in forward biased) In…

Q: Q/ Assume ench diode in the circult that shown below is silicon diode. Determine the value of R,…

Q: In junction diode forward biased the thickness of the depletion region is - Your answer

A: Given In junction diode forward biased the thickness of the depletion region is....

Q: Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping concentrations…

Q: Given the empirical diode junction equation V = nV, In with VT = 26 mV, Is = 3.9x10-15 A. Determine…

A: Given, Diode voltage VD=nVTlnIDIs VT=26 mV Supply current Is=3.9×10-15 A

Q: Determine the voltage across the diode in the figure below, using the complete diode model with:…

A: Given data: r'd=10Ω, r'R=100MΩ a. The forward current If (in Amperes)b. The forward voltage Vf c.…

Q: 4. Calculate the capacitance of the pn junction diode in the circuit below. Cjo = 100 pF and Vbi =…

Q: Solve the current through the silicon diode Assume piecewise-linear diode model with ra 50N and =…

A: In this question We need to determine the current in the diode. Assume forward bias conduction…

Q: A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer…

A: Doping concentration in p-layer, NA=1019 cm-3.Doping concentration in n-layer, ND=0.7×1016…

Q: Find I and V using the constant voltage drop model to model the diodes (Hint: assume both diodes are…

Q: a. If you do not go completely around the loop when applying Kirchhoff’s voltage law, then the…

A: Given, a) what will happen If we do not go completely around the loop when applying Kirchhoff’s…

Q: 5V 100 Ohm b. 3V 100 Ohm From the figure, assume the diode to be ideal, what is the voltage across…

Q: For each of the circuits shown below, draw its voltage transfer curve, using the constant-drop model…

A: Since you have posted the multiple questions so we are supposed to answer the 1st three sub part.

Q: Question 1: For the circuit given below, Vin = 10sin(2aft), where f= 200 Hz. The turn on voltages of…

A: According to the question, for the circuit given below, Vin=10sin(2πft), where f=200 Hz. The turn on…

Q: Consider the following circuit: VI R₁ = 4kQ2 IDI R₂ = 8 ΚΩ D₁ ID2 R3 = 6ΚΩ D₂ ID3 + 1.0 V - VO R4= 4…

A: In the diode circuit we need to find out ID1,ID2,ID3 and Vo with constant voltage model Circuit:

Q: D1 D, vo 1 kN 1 kN D2 D1

A: First we will find out relationship between input and output voltage . Then we will draw output…

Q: Activity 1: The following circuit uses two diodes D1, and D2 with threshold voltage of 0.7 V for…

A: Dear student,Since you have posted a question with multiple sub parts, we will provide the solution…

Q: 11. From the figure below, assume the diode to be ideal, 5V what is the current through the 100 ohm…

Question

Q3. *
Calculate the junction capacitance of a silicon pn junction at T = 300 K with doping
concentrations of Na = 10¹6cm-³and Na = 10¹5 cm-³. Assume that the intrinsic
concentration n = 1.5 x 100 cm-3 and the reverse bias V, 5V
Note/
Your answer
-1.035 x 10-¹2F/cm
e-16x 10-¹c

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

Step 2

Step 3

Step 4

Step 5

Step by step

Solved in 5 steps with 6 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Three Phase Controlled and Uncontrolled Rectifiers

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

6- Please solve this question with all steps. Thanks
3. Solve for Id and Vo.4. , 5. Draw the output voltage waveform
The current through the diode in the circuit given in the Figure below when Vy = 0.7 V is? ww 8092 12V Select one a. 24.26 mA b. 13.09 mA c. 58.23 mA d. 40.13 mA 40-52 ww 3092 ID
Can you help me solve this and explain clearly I saw some answers on chegg but I don’t understand it .
i need the answer quickly
For the following circuit: Find the current that goes through each diode. What's the value of Vo? Invert polarity of the 5V source and obtain the following: Find the current that goes through each diode. What's the value of Vo? V1 -5V H D1 1N4001 R2 >1kQ 11 D2 1N4001 R1 2kQ ww R3 1kQ Vo Use simplified model
In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
At 20 C a pn junction silicon diode has a current-voltage relation of I = 101+le*0v _ 1). What is the diode voltage when the current is 50 mA? %3D
Explain why Depletion Zone inside P-N Junction is a problematic area? What necessary measures should be taken to remove the depletion zone?
The diode current at 25°C for a silicon diode with Is= 55 nA an applied forward bias of 0.8 V is -----. Note: use K=11600/2 0.543 A O 0.2 A 0.743 A 0.318 A
With the given circuit below, if the input voltage is 10 volts peak-to-peak and the diode is silicon, how much is the output voltage in volts on the negative half cycle? (put polarity (+ or -) and values only) + RL out
Consider the given choices