Q3: MOSFET Fabrication: 1. 7. OX ptype substrate ptype substrate well 2. OX 8. ptype substrate ptype substrate 9. Poly Si for gate contact Nitride Spacer for isolation 3. Gate metal -well ptype substrate ptype substrate 10. 4. well ptype substrate ptype substrate 5. 11. well ptype substrate 6. ptype subatrate 12. -well ptype substrate ptype substrate Using the above image, list the process occurring in each step and a single sentence describing the purpose of the process: 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: 11: 12:

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Q3: MOSFET Fabrication:
1.
7.
OX
ptype substrate
ptype substrate
-well
2.
OX
8.
ptype substrate
ptype substrate
9.
Poly Si for gate contact
Nitride Spacer for isolation
3.
Gate metal
-well
ptype substrate
ptype substrate
10.
4.
well
ptype substrate
ptype substrate
11.
5.
awll
ptype substrate
6.
ptype subatrate
12.
-well
ptype substrate
ptype substrate
Using the above image, list the process occurring in each step and a single sentence describing the
purpose of the process:
1:
2:
3:
4:
5:
6:
7:
8:
9:
10:
11:
12:
Transcribed Image Text:Q3: MOSFET Fabrication: 1. 7. OX ptype substrate ptype substrate -well 2. OX 8. ptype substrate ptype substrate 9. Poly Si for gate contact Nitride Spacer for isolation 3. Gate metal -well ptype substrate ptype substrate 10. 4. well ptype substrate ptype substrate 11. 5. awll ptype substrate 6. ptype subatrate 12. -well ptype substrate ptype substrate Using the above image, list the process occurring in each step and a single sentence describing the purpose of the process: 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: 11: 12:
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