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*(h) Except for W/L ratios establishëd by the photolithography design, the fabrication process is the same for all FETS. Pay attention to sign conventions! Provide values for: ID3 ID4 ID7 ID5 = (Trick question. Careful-look at the drain circuit for M5!

*(h) Except for W/L ratios establishëd by the photolithography design, the fabrication process is the same for all FETS. Pay attention to sign conventions! Provide values for: ID3 ID4 ID7 ID5 = (Trick question. Careful-look at the drain circuit for M5!

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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### Circuit Analysis and Parameters #### Circuit Diagram Description: The circuit diagram shows a multi-stage MOSFET configuration powered by a VDD of 10 Volts. It includes several MOSFETs (M1 to M8) and resistors (R1 to R3) connected in a complex layout. A capacitor, C1, is also part of the design, connected to ID5. #### Assumptions: 1. **M1 and M2 are matched.** 2. **\(\lambda = 0\)** for all MOSFETs. 3. **L** (length) is identical for all FETs. 4. **ID2 = 50 μA.** 5. **Width Conditions:** - \(W1 = W2 = W3 = W6 = W8\) - \(W4 = W5 = 2 \times W2\) - \(W7 = 3 \times W8\) 6. Except for W/L ratios established by the photolithography design, the fabrication process is the same for all FETs. #### Notes: - Pay attention to sign conventions! #### Values to Determine: - **ID3 = ______________________** - **ID4 = ______________________** - **ID7 = ______________________** - **ID5 = ______________________** - *(Trick question. Carefully look at the drain circuit for M5!)* This setup is ideal for educational purposes and provides a fundamental understanding of MOSFET circuit design and analysis, emphasizing the effects of photolithography adjustments on transistor performance.
Transcribed Image Text:### Circuit Analysis and Parameters #### Circuit Diagram Description: The circuit diagram shows a multi-stage MOSFET configuration powered by a VDD of 10 Volts. It includes several MOSFETs (M1 to M8) and resistors (R1 to R3) connected in a complex layout. A capacitor, C1, is also part of the design, connected to ID5. #### Assumptions: 1. **M1 and M2 are matched.** 2. **\(\lambda = 0\)** for all MOSFETs. 3. **L** (length) is identical for all FETs. 4. **ID2 = 50 μA.** 5. **Width Conditions:** - \(W1 = W2 = W3 = W6 = W8\) - \(W4 = W5 = 2 \times W2\) - \(W7 = 3 \times W8\) 6. Except for W/L ratios established by the photolithography design, the fabrication process is the same for all FETs. #### Notes: - Pay attention to sign conventions! #### Values to Determine: - **ID3 = ______________________** - **ID4 = ______________________** - **ID7 = ______________________** - **ID5 = ______________________** - *(Trick question. Carefully look at the drain circuit for M5!)* This setup is ideal for educational purposes and provides a fundamental understanding of MOSFET circuit design and analysis, emphasizing the effects of photolithography adjustments on transistor performance.
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