Q1 For figures 1 & 2 drawa) D.C load line with Q-point?b) The input & output signals at V₁ = 100mVp.p, (at common Y axis)?Q2 Explain which one from these transistors can be use as amplifier in fig. 3?1. JFET with (IDss = 10mA & VGS off - 2V).==2. D-MOSFET with (IDss = 8mA & VGSoff = -IV).3.E-MOSFET with (K = (6/24)m & VGS th = +2V).Q3 For figure 4 if(V₁ = 40mVpp, IDss= 10mA, Vp = 4v, VGSQ = -2.2 V andIDQ = 2.03 mA).1) Draw A.C equivalent circuit?2) Determine 9m & Vo?3) Calculate Z₁ & Zo?VDDVDD = 10RDVGS(off)=-6IDSS= 5mA1KHHVGS(off) = -5IDSS = 6mA10KV's* 10RD1KVoutRL10KFig.1= 20RG10MVDDRD2KDFr...RGMFig. 310KGRG10MST+12V3.6k2431.lkRL10KFig. 2solve Q3Vou!Fig. 4Vout

Answered: Image /qna-images/answer/4a223a6a-a3df-41c7-8007-56d001d203fe.jpg

3. SPET with (D Q3 For figure 4 if(V₁ = 40mVp.p, IDss= 10mA, Vp = 4v, VGSQ = -2.2 V and IDQ = 2.03 mA). 1) Draw A.C equivalent circuit? 2) Determine 9m & Vo? 3) Calculate Z₁ & Zo? VDD = 10 RD VGS(off)=-6 IDSS= 5mA 1K 10K VGS(off) = -5 IDSS = 6mA 10K V's VDD 10 RD 1K Vout RL 10K Fig.1 RG 10M VDD = 20 RD 2K Fr. RG Fig. 3 G RG 10M S +12V 3.6k 31.1k Vs solve Q3 Vout RL 10K Fig. 2 Vout

3. SPET with (D Q3 For figure 4 if(V₁ = 40mVp.p, IDss= 10mA, Vp = 4v, VGSQ = -2.2 V and IDQ = 2.03 mA). 1) Draw A.C equivalent circuit? 2) Determine 9m & Vo? 3) Calculate Z₁ & Zo? VDD = 10 RD VGS(off)=-6 IDSS= 5mA 1K 10K VGS(off) = -5 IDSS = 6mA 10K V's VDD 10 RD 1K Vout RL 10K Fig.1 RG 10M VDD = 20 RD 2K Fr. RG Fig. 3 G RG 10M S +12V 3.6k 31.1k Vs solve Q3 Vout RL 10K Fig. 2 Vout

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

We want to investigate how the field strength will be with air as dielectric and with steatite. A plate capacitor is placed in a 24 kV network between phase and ground. The relative permittivity of air is &=1 and for steatite &-6. The plate capacitor has area = 1m². The distance between the electrodes is 2 mm. Ep = 8.854-10-12 F/m A=1m² d=2mm a) Calculate the maximum field strength in the plate capacitor. (Answer: 9.8kV/mm) b) What is the capacitance of the capacitor if we use steatite? (Answer: C = 26.6nF)
What is the relevance of safety factors in circuit design? Explain in a paragraph with 8 sentences.
c). write the current equation for the circuit below 60 mA 20 mA 14 Is 40 mA 30 mA Determine the missing currents from the equation in c).
For a combined circuit digram, what should we do first? what will happen to the resistance? what will happen to the voltage? what will happen to the current? Please give an explanation to a combined circuit diagram.
What is the value of VG? What is the current through RG? What is the value of VGS? What is the value of the drain current? in DC, how are the capacitors treated?
O * 33% A moodle1.du.edu.om e SIM aY The measured temperature is 173 OF and the reference is 45 °F. The voltage. in mV is Select one: O a. 4.643 O b. 4.097 O e. 3.732 O d. -3.732 Previous page Next page
Q1: For the circuits shown in figures. If the temperature has changed from 25°C to 65°C. find AIc. Ic=1.5mA at 25°C. Vcc +20v 25°C 65°C 47k 33.9k 55 70 Ico InA 16nA 12knS VBE 0.6 0.5 S1.2k
Q2) Consider the circuit in Figure (3), and answer 3 branch only. a) What type of circuit is this? b) What is the total peak secondary voltage? c) Find the peak voltage across each half of the secondary. d) Sketch the voltage waveform across RL. 4:1 120 V rms RL 1.0 k2 D2 eelee
The resistance increases as temperature rises usually due to increased thermal lattice agitations is a. RTD b. PTC c. NTC d. EMF
Discuss atleast two basic sources of value for storage technologies in high voltage
2 The figure is a graph of ... 5 (5 Points) Current Voltage the current across a voltage as a function of the potential difference through it the resistance as a function of the current across a component the current through a component as a function of the voltage across it All three of the above (a), (b), and (c) are true None of the above (a), (b), or (c) is true
Propose Snubber circuits that will take care of dv/dt, di/dt protection and provide Trapped energy recovery and save against the inductive kick from the load?