Q2/Consider silicon at T = 300 K that is doped with donor impurity atoms to a concentration of Nd = 5 X 105 cm. The excess carrier lifetime is 2 X 10 s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that ôn= 8p=10“ cm. What is the recombination rate of holes for this condition?

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Q2/Consider silicon at T = 300 K that is doped with donor impurity atoms to a
concentration of Nd = 5 X 105 cm. The excess carrier lifetime is 2 X 107 s.
(a) Determine the thermal equilibrium recombination rate of holes.
(b) Excess carriers are generated such that ôn= dp=104 cm³. What is the recombination
rate of holes for this condition?
Transcribed Image Text:Q2/Consider silicon at T = 300 K that is doped with donor impurity atoms to a concentration of Nd = 5 X 105 cm. The excess carrier lifetime is 2 X 107 s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that ôn= dp=104 cm³. What is the recombination rate of holes for this condition?
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