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Q1/ Aluminum is diffused into pure silicon to make a semiconductor material. How long should be the silicon be heated at 1300°C in contact with the aluminum such that the aluminum concentration at 0.01 mm below the surface of silicon. Q= 80 000 cal /mol. X=V Dt (Take :- Do for Al in Si is 8 cm²/sec. X= distance. t= time. D= Diffusion coefficient. R= gas constant = 2 cal/mol.°K

Q1/ Aluminum is diffused into pure silicon to make a semiconductor material. How long should be the silicon be heated at 1300°C in contact with the aluminum such that the aluminum concentration at 0.01 mm below the surface of silicon. Q= 80 000 cal /mol. X=V Dt (Take :- Do for Al in Si is 8 cm²/sec. X= distance. t= time. D= Diffusion coefficient. R= gas constant = 2 cal/mol.°K

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
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Q1/ Aluminum is diffused into pure silicon to make a semiconductor material. How long should be the silicon be heated at 1300°C in contact with the aluminum such that the aluminum concentration at 0.01 mm below the surface of silicon. (Take :- Do for Al in Si is 8 cm?/sec. X= distance. t= time. Q= 80 000 cal /mol. X=V Dt D= Diffusion coefficient. R= gas constant = 2 cal/mol.°K
Transcribed Image Text:Q1/ Aluminum is diffused into pure silicon to make a semiconductor material. How long should be the silicon be heated at 1300°C in contact with the aluminum such that the aluminum concentration at 0.01 mm below the surface of silicon. (Take :- Do for Al in Si is 8 cm?/sec. X= distance. t= time. Q= 80 000 cal /mol. X=V Dt D= Diffusion coefficient. R= gas constant = 2 cal/mol.°K
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