Q.6. A) For the output stage shown below, the transistors have the following specifications:npn T's : B = 200 &VA=120 Vpnp T's : B= 100 &VA=60 VUse | Vetom| = 0.7 V and | VoEsat|(a) Draw the transfer C/Cs showing all limits for R=20 2, R=200 2 and R=1k 2.(b)Write an expression for the output impedance= 0.2V for all transistors15VQ2Q1D1VoD2- 15VRL15VR1Q47.325kaQ5Q6- 15V一

According to the question we have to draw the C/Cs showing all limits and write the expression for…

Answered: Q.6. A) For the output stage shown…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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VcC R2 RC- RI RL R1 RE VEE Assume: B=100, VA=150, Vcc=12V, VɛE=GND, R=2K, R1=160K, R2=300K, Rɛ=3K, Rc=2.2K, and R1=100K. A.)For the circuit draw the AC equivalent circuit (including the small signal model for the transistor). Then compute r„, ľo, and gm. Then compute Av (the gain for the entire circuit), and Rin (for the whole circuit). B.)Convert the circuit to a common-collector circuit. Draw the new circuit (assume the same values for the input and load resistances). Then compute the terminal voltage gain, and Rin (for the whole circuit), re-computing any parameters that you need to solve.
Instruction/s: Draw, Illustrate and label your schematic diagram before solving the problem. 1.) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These is the example or guide that might help in answering the problem.
8.
Discuss the significant different between the construction of an E-MOSFET and a D-MOSFET.
Q4. For the circuit shown in Figure Q4: i) What is the type of MOSFET and the amplifier configuration? ii) Find the Q-point (Ip and Vps) iii) What is the device transconductance, gm? iv) What are the voltage gain and output voltage? v) Draw the input /output voltage waveforms showing the phase relationship between them. Be sure to label them properly. +20V IDON = 15 mA@ VcsON = 6V VGSTH = 1V 1kQ Rp C2 10M2 Ro1 out Vin 3.3MQ Ra, 47003 Rs 50mV Figure Q4
2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CE
In a MOSFET amplifier, the AC input signal is applied at gate terminal and the amplified output is taken at source terminal. common emitter common gate common source common drain
Correct the sentence: The aim of using coupling in multistage transistor amplifiers is to transfer DC output of one stage to the input of the next .stage and to isolate the d.c. conditions of one stage from the next stage
4. A Darlington transistor is essentially an array of two transistors connected as shown below. Assume both transistors follow our simple model with a current gain of B=100. Determine the maximum value of R2 that will just saturate the transistors, and pass full current through the load resistance R1. v2 V2 R2 PULSE (0 5 0) Q2 NPN R1 10 Q1 NPN V1 24
Please all subpart is compulsory for like this please Asap
For the given circuit, Vcc = 19 volts, Rg = 900 KN, Rc = 8 KN, RE = 3 KN and B = 100. Assume Transistor is Silicon, VBE=0.7 volts. Vcc RC RB RE a. Compute for the base current Q-point, IBa (in Amperes) [ b. Compute for the collector current Q-point, Ica (in Amperes). c. Compute for the collector-to-emitter voltage, VCEQ (in Volts) d. Draw the Load Line, with details.'
In the circuit given in the figure, Vcc = 15 V, R1 = R2 = 10kΩ, RE = 1KΩ, RL = 0.5kΩ and transistor parameters are given as VBE = 0.7V, ßdc = ß0 = 100. a. Calculate the values of DC bias currents and voltages (IBQ, ICQ and VCEQ). b. Draw the small signal equivalent circuit of the circuit using the hybrid model of the transistor. c. Derive the input impedance expression of the circuit and calculate its value. d. Derive the AVI and AVG voltage gain expressions and calculate their values. e. Derive the current gain expression AI = I0 / Ii and calculate its value. Compare this value you have calculated with the value you will calculate using the expression Aİ = Zi AVI / RL.

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