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Q.3 (a) A capacitor's structure is made up of two conductors that are separated by a dielectric material. Describe the phenomenon that allow the flow of current through the dielectric material. Include in the description relevant mathematical derivation of the abovementioned phenomenon. (b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plate A and plate B plus a dielectric material with ɛ, = 3.8 and o = 4 S/m between the %3D plates. Potential difference across plates A Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) and and B is VAB(t) = -Q(t) respectively as well as fringing field at the edge of the plates can be ignored, determine: AY (i) Q(t) if the capacitance is 2.135 x 10 11 F (ii) M(t) if electric field within the capacitor, E(t) = "2er M(t)/,rer fV/m %3D Based on Q.3(b)(ii), examine: (iii) Conduction current density and conduction current. (iv) Displacement current density and displacement current. NIV

Q.3 (a) A capacitor's structure is made up of two conductors that are separated by a dielectric material. Describe the phenomenon that allow the flow of current through the dielectric material. Include in the description relevant mathematical derivation of the abovementioned phenomenon. (b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plate A and plate B plus a dielectric material with ɛ, = 3.8 and o = 4 S/m between the %3D plates. Potential difference across plates A Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) and and B is VAB(t) = -Q(t) respectively as well as fringing field at the edge of the plates can be ignored, determine: AY (i) Q(t) if the capacitance is 2.135 x 10 11 F (ii) M(t) if electric field within the capacitor, E(t) = "2er M(t)/,rer fV/m %3D Based on Q.3(b)(ii), examine: (iii) Conduction current density and conduction current. (iv) Displacement current density and displacement current. NIV

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Q.3 (a) A capacitor's structure is made up of two conductors that are separated by a dielectric material. Describe the phenomenon that allow the flow of current through the dielectric material. Include in the description relevant mathematical derivation of the abovementioned phenomenon. (b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plate A and plate B plus a dielectric material with ɛ, 3.8 and o = 4 S/m between the plates. Potential difference plates A across is VAB (t) = Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) and and -Q(t) respectively as well as fringing field at the edge of the plates can be ignored, determine: (i) Q(t) if the capacitance is 2.135 x 10-11 F (ii) M(t) if electric field within the capacitor, E(t) = M(t) fV/m Based on Q.3(b)(ii), examine: (iii) Conduction current density and conduction current. UNIVE (iv) Displacement current density and displacement current. arch ASUS VivoBook
Transcribed Image Text:Q.3 (a) A capacitor's structure is made up of two conductors that are separated by a dielectric material. Describe the phenomenon that allow the flow of current through the dielectric material. Include in the description relevant mathematical derivation of the abovementioned phenomenon. (b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plate A and plate B plus a dielectric material with ɛ, 3.8 and o = 4 S/m between the plates. Potential difference plates A across is VAB (t) = Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) and and -Q(t) respectively as well as fringing field at the edge of the plates can be ignored, determine: (i) Q(t) if the capacitance is 2.135 x 10-11 F (ii) M(t) if electric field within the capacitor, E(t) = M(t) fV/m Based on Q.3(b)(ii), examine: (iii) Conduction current density and conduction current. UNIVE (iv) Displacement current density and displacement current. arch ASUS VivoBook
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