Q.3 (a) A capacitor's structure is made up of two conductors that are separated by adielectric material. Describe the phenomenon that allow the flow of currentthrough the dielectric material. Include in the description relevant mathematicalderivation of the abovementioned phenomenon.(b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plateA and plate B plus a dielectric material with ɛ, 3.8 and o = 4 S/m between theplates. Potentialdifferenceplates Aacrossis VAB (t) =Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) andand-Q(t) respectively as well as fringing field at the edge of the plates can be ignored,determine:(i)Q(t) if the capacitance is 2.135 x 10-11 F(ii)M(t) if electric field within the capacitor, E(t) = M(t)fV/mBased on Q.3(b)(ii), examine:(iii) Conduction current density and conduction current.UNIVE(iv) Displacement current density and displacement current.archASUS VivoBook

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Q.3 (a) A capacitor's structure is made up of two conductors that are separated by a dielectric material. Describe the phenomenon that allow the flow of current through the dielectric material. Include in the description relevant mathematical derivation of the abovementioned phenomenon. (b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plate A and plate B plus a dielectric material with ɛ, = 3.8 and o = 4 S/m between the %3D plates. Potential difference across plates A Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) and and B is VAB(t) = -Q(t) respectively as well as fringing field at the edge of the plates can be ignored, determine: AY (i) Q(t) if the capacitance is 2.135 x 10 11 F (ii) M(t) if electric field within the capacitor, E(t) = "2er M(t)/,rer fV/m %3D Based on Q.3(b)(ii), examine: (iii) Conduction current density and conduction current. (iv) Displacement current density and displacement current. NIV

Q.3 (a) A capacitor's structure is made up of two conductors that are separated by a dielectric material. Describe the phenomenon that allow the flow of current through the dielectric material. Include in the description relevant mathematical derivation of the abovementioned phenomenon. (b) A capacitor such as illustrated in Figure Q.3 is constructed using copper as plate A and plate B plus a dielectric material with ɛ, = 3.8 and o = 4 S/m between the %3D plates. Potential difference across plates A Vo cos(2n x 10°t) V. Assume that Plate A and plate B carry charges +Q(t) and and B is VAB(t) = -Q(t) respectively as well as fringing field at the edge of the plates can be ignored, determine: AY (i) Q(t) if the capacitance is 2.135 x 10 11 F (ii) M(t) if electric field within the capacitor, E(t) = "2er M(t)/,rer fV/m %3D Based on Q.3(b)(ii), examine: (iii) Conduction current density and conduction current. (iv) Displacement current density and displacement current. NIV

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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