Q. Indium phosphate is a direct gap III-V semiconductor with a band gap of 1.35 eV at room temperature. The absorption coefficient at 775 nm is 3.5 x 106 m-1. A platelet sample 1 um thick is made with antireflection coated surfaces. Estimate the transmission of the sample at 620 nm. Hint: The sample is antireflection coated, and so you may take reflectance as zero (R=0).

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Q. Indium phosphate is a direct gap II-V semiconductor with a band gap of 1.35 eV
at room temperature. The absorption coefficient at 775 nm is 3.5 x 106 m-1.
A platelet sample 1 um thick is made with antireflection coated surfaces.
Estimate the transmission of the sample at 620 nm.
Hint: The sample is antireflection coated, and so you may take reflectance as zero
(R=0).
Transcribed Image Text:Q. Indium phosphate is a direct gap II-V semiconductor with a band gap of 1.35 eV at room temperature. The absorption coefficient at 775 nm is 3.5 x 106 m-1. A platelet sample 1 um thick is made with antireflection coated surfaces. Estimate the transmission of the sample at 620 nm. Hint: The sample is antireflection coated, and so you may take reflectance as zero (R=0).
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